Cheil Industries Inc.

Samsung Sdi Co., Inc.

Kwang Jin Jung

Jae Sun Han

Dong Seon Uh

Kyoung Soo Park

Kyoung Ku Kang

Ji Yeon Kim

Young Ju Shin

Hyun Hee Namkung

Ja Young Hwang

Hyun Wook Kim

Jin Young Seo

Byeong Geun Son

Jin Seong Park

Kyoung Hun Shin

Young Woo Park

Kyung Il Sul

Woo Jung Shin

Kyung Jin Lee

Gyu Ho Lee

Young Hun Kim

Il Rae Cho

A semiconductor device connected by an anisotropic conductive film, the anisotropic conductive film having a differential scanning calorimeter onset temperature of 60&#xb0; C. to 85&#xb0; C., and a elastic modulus change of 30% or less, as calculated by Equation 1, below,Elastic modulus change(%)={()/}&#xd7;100&#x2003;&#x2003;[Equation 1] wherein Mis an initial elastic modulus in kgf/cmof the anisotropic conductive film as measured at 25&#xb0; C., and Mis a elastic modulus in kgf/cmof the anisotropic conductive film as measured at 25&#xb0; C. after the film is left at 25&#xb0; C. for 170 hours.

Semiconductor device connected by anisotropic conductive film

A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80&#xb0; C. to about 110&#xb0; C. and a second epoxy resin having an exothermic peak temperature of 120&#xb0; C. to 200&#xb0; C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

A semiconductor device bonded by an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition having a solid content ratio between a polymer binder system and a curing system of about 40:60 to about 60:40, and a coefficient of thermal expansion of about 150 ppm/&#xb0; C. or less at about 100&#xb0; C. or less.

Semiconductor device using composition for anisotropic conductive adhesive film or anisotropic conductive adhesive film

An electronic device includes an anisotropic conductive adhesive film as a connection material, wherein the anisotropic conductive adhesive film has a flowability of 50% or more after preliminary pressing at 80&#xb0; C. and 1 MPa for 1 second and final pressing at 180&#xb0; C. and 3 MPa for 5 seconds, and a connection resistance increment greater than 0% but not greater than 25%, as calculated by Expression 1:Connection resistance increment (%)=|()/|&#xd7;100&#x2003;&#x2003;(Expression 1)where A is a connection resistance measured after preliminary pressing at 80&#xb0; C. and 1 MPa for 1 second and final pressing at 180&#xb0; C. and 3 MPa for 5 seconds, and B is a connection resistance measured after reliability evaluation at a temperature of 85&#xb0; C. and a humidity of 85% for 250 hours following preliminary pressing and final pressing.

Provided is a semiconductor device, including an anisotropic conductive film connecting the semiconductor device, the anisotropic conductive film having a maximum stress of 0.4 kgf/mmor more; and a stress-strain curve having a slope (A) of greater than 0 and less than or equal to 0.2 kgf/(mm&#xb7;%) as represented by the following equation 1:slope()=(&#xbd;)/&#x2003;&#x2003;(1),

An optical member includes an anisotropic conductive film that has a multilayer structure having a bonding layer containing an epoxy resin as a curing part and a bonding layer containing a (meth)acrylate resin as a curing part.

Optical member comprising anisotropic conductive film

A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110&#xb0; C. to 200&#xb0; C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample,Increased ratio of expansion length (%)=[(length of corresponding layer in width direction after compression&#x2212;length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]&#xd7;100.&#x2003;&#x2003;[Equation 1]

A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a phenoxy resin including a fluorene-substituted phenoxy resin; and a radically polymerizable resin including a fluorene-substituted acrylate.

Anisotropic conductive film and semiconductor device

An anisotropic conductive adhesive composite and film include a binder and conductive particles dispersed in the binder. The conductive particles include a copper core particle and a metal coating layer coated on a surface of the corresponding copper core particle.

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Uiwang-si, South Korea

Kwang Jin Jung