Magnachip Semiconductor, Inc.

Key Foundry Co., Ltd

Sk Keyfoundry Inc.

Other

Kwang Il Kim

Young Bae Kim

Jung Hwan Lee

Min Kuck Cho

Yang Beom Kang

Hyun Chul Kim

Jin Yeong Son

Jae Hyung Jang

Jun Hyun Kim

In Sik Jung

In Taek Oh

Francois Hebert

Kyung Ho Lee

Jin Woo Moon

I-Shan Sun

Jin Woo Song

Young Ju Kim

Willy Heinz Hofmann

Herbert Brandl

A semiconductor device is provided. The semiconductor device includes a first region having a first gate structure disposed on a substrate and a second region having a second gate structure disposed on the substrate, a hard mask formed on the substrate, the first gate structure, and the second gate structure, a deep trench formed in the substrate between the first region and the second region, and formed to penetrate the hard mask to reach an inside of the substrate, and a planarized gap-fill insulating layer formed on the second gate structure and formed inside the deep trench. A topmost surface of the planarized gap-fill insulating layer and a topmost surface of the hard mask are coplanar.

Semiconductor device with deep trench isolation

A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device

Provided are a semiconductor device, a method of manufacturing the same, and a method of forming a uniform doping concentration of each semiconductor device when manufacturing a plurality of semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable by using ion blocking patterns to provide a semiconductor device with uniform doping concentration and a higher breakdown voltage obtainable as a result of such doping.

Semiconductor and method of fabricating the same

A turbine blade that allows an improvement in torque and power, and a turbine and gas turbine including the same are provided. The turbine blade includes an airfoil having a suction side and a pressure side, a platform coupled to a bottom of the airfoil, and a root protruding downward from the platform and coupled to a rotor disk, wherein the airfoil includes a cooling passage formed therein and a discharge hole connected to an upper portion of the cooling passage to discharge cooling air, and the discharge hole is inclined toward a tip of the turbine blade while extending from an inside to an outside thereof.

Turbine blade, and turbine and gas turbine including the same

A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

Integrated semiconductor device and method for manufacturing the same

Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.

An example provides a semiconductor device including an insulator with a predetermined thickness between a well region of a semiconductor substrate and a resistor of polysilicon. The insulator has a structure that is able to withstand an ultrahigh voltage, and thereby allows the manufacture of a semiconductor device resistor that can bear an ultrahigh voltage without increasing the size of a semiconductor substrate and a semiconductor device including such a resistor. Other examples provide a method for manufacturing such a semiconductor device.

Ultrahigh voltage resistor, semiconductor device, and the manufacturing method thereof

The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples are able to control a pinch-off feature of the junction transistor while also maintaining electric features of the high voltage transistor by forming a groove on a lower part of a first conductivity type deep-well region located on a channel region of the junction transistor in a channel width direction.

Growing community of inventors

Cheongju-si, South Korea

Kwang Il Kim