Skhynix Inc.

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Dong Wha Pharm. Co., Ltd.

Amtpacific Co., Ltd.

Lg Electronics Inc.

Lg Chem, Ltd

Lg Energy Solution, Ltd.

Posco

Postech Research and Business Development Foundation

Research Institute of Industrial Science & Technology

Korea Polytechnic University Industry Academic Cooperation Foundation

Piolink, Inc.

Kwang Hyun Kim

Jin-Won Lee

Young-min Cheong

Jae Hyeong Jeong

Hyun Yeul Lee

Chong-sam Chung

Sung Hoon Kim

Dae Sung Kim

Sang Jae Kim

Dong Yeob Chun

Heon Sik Ha

Dong Rack Choi

Ji Hye Kim

Jong-Chul Choi

Jun Hee Lee

Yong Su Lee

Tae Wook Kang

Tae-Kyung Kim

Gyo Hyun Hwang

Ji Won Park

Soo Young Oh

Sang Wook Lee

Dae-Hwan Kim

Seok-jung Kim

Su-ho Shin

Keun Woo Kim

Young Jun Park

Myung Han Lee

Chang Woo Son

Ju Hee Kim

Jung Yun Jo

Jin-Kyung Lee

Woo-Seok Jeon

Hea-jung Suh

Myong Hun Im

Yung Bin Chung

Doo Na Kim

Jae Hwan Chu

Yeoung Keol Woo

Do Kyeong Lee

Jae Won Jeong

Myung Jin Jo

Dong Chul Lee

Bo Sung Seo

Won Hyuk Jang

Kyung-sik Shin

Sang Hee Yoo

Joong Hyun An

Jae Woo Kim

Joo Byoung Yoon

Hwan Bong Chang

Seon Ah Cho

Byeong Kyeom Lee

Ji Hyun Jeon

Ji Hyun Youm

Hyo Sung Hong

Gwan Young Na

Seung Kyoo Seong

Jin Ho So

Jung Ho Choi

Teck Soo Kim

Young-bin Lee

Eun Gu Han

Yun Ha Hwang

Hyoung Joo Lee

Kyeong Heon Lee

Ki Joon Kang

In Sung Hwang

Sung Han Bae

Min Soo Choi

Young Bong Lee

Chui Hwan Choo

Chan Jin Park

Yeon Hyuk Heo

Min Su Hwang

Je Young Kim

Jang Sik Lee

Ki-Bum Park

Hoi Jun Kim

Ji Young Woo

Doo-hwan Kim

Tetsuo Ando

Mi Hee Yoon

Jong-chul Choi

Hun Min Park

Jung Up Bang

Jin Woo Seo

Young Cheol Cho

Hyun Yong Lee

Bong Gon Ryu

Sung Hoon Kiim

Provided is a display device. The display device comprises a first substrate, a barrier layer disposed on the first substrate and having amorphous carbon, a first pad part disposed on the barrier layer, a second substrate disposed on the first pad part, a display layer disposed on the second substrate, and a second pad part disposed on a bottom surface of the first substrate and inserted into a first contact hole formed in the first substrate and the barrier layer.

Display device having a pad part disposed on a barrier layer, method of manufacturing the same and tiled display device including the same

The present invention relates to an eddy current sensor for detecting a crack in a battery cell, and a system for detecting a crack of a battery cell including the eddy current sensor. According to the present invention, it is possible to easily detect a crack generated in an electrode, an electrode tab or a welded portion.

Eddy current sensor for detecting crack of battery cell and system for detecting crack of battery including the same

The present invention provides a multi-layer selector device exhibiting a low leakage current by controlling a threshold voltage. According to an embodiment of the present invention, the multi-layer selector device comprises: a substrate; a lower electrode layer disposed on the substrate; an insulating layer disposed on the lower electrode layer and having a via hole passing through to expose the lower electrode layer; a switching layer disposed on the lower electrode layer in the via hole, performing a switching operation by forming and destroying a conductive filament, and made of a multi-layer to control the formation of the conductive filament; and an upper electrode layer disposed on the switching layer.

Multi-layer selector device and method of fabricating the same

Provided are an anode for electrolysis, which includes a metal base, and a catalyst layer disposed on at least one surface of the metal base, wherein the catalyst layer includes a composite metal oxide of ruthenium, iridium, titanium, and platinum, and a metal in the composite metal oxide does not include palladium, wherein, when the catalyst layer is equally divided into a plurality of pixels, a standard deviation of iridium compositions of the plurality of equally divided pixels is 0.40 or less, and a method of preparing the same.

Anode for electrolysis and preparation method thereof

A method of manufacturing a photo sensor includes forming a first conductive layer on a substrate, the first conductive layer including a metal layer and a transparent conductive oxide layer formed on the metal layer, forming a photoconductive layer on the first conductive layer, forming a second conductive layer on the photoconductive layer, forming a first photoresist pattern on the second conductive layer, etching the second conductive layer using the first photoresist pattern as an etch mask to form a second electrode, deforming the first photoresist pattern to form a second photoresist pattern, and etching the photoconductive layer and the first conductive layer using the second photoresist pattern to form a photoconductive pattern and a first electrode, respectively.

Method of manufacturing photo sensor

A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.

Display device

The present technology includes a controller and a memory system including the same. The controller includes a memory interface configured to receive a codeword from a memory device, and an error correction circuit configured to: perform an error correction decoding operation on the codeword received from the memory interface, compare a number of unsatisfied check nodes (UCNs) detected in the error correction decoding operation with a reference number, perform or stop the error correction decoding operation on the codeword according to a result of comparing the number of UCNs and the reference number, and output a retransmission request signal of the codeword to the memory interface in response to the result, wherein the memory interface requests the codeword to the memory device in response to the retransmission request signal.

Controller and memory system having the controller

An error correction circuit using a BCH code may include a decoder performing at least one of a first error correction decoding using a first error correction capability or a second error correction decoding using a second error correction capability and an encoder generating a codeword based on a message and a generation matrix corresponding to the first error correction capability and generating an additional parity based on the codeword and one or more rows of a parity check matrix corresponding to the second error correction capability, wherein a syndrome vector generated based on a read vector corresponding to the codeword is used during the first error correction decoding and an additional syndrome generated based on the additional parity is used during the second error correction decoding, and wherein the one or more rows are extended from a parity check matrix corresponding to the first error correction capability.

Error correction circuit, memory controller having error correction circuit, and memory system having memory controller

Provided herein may be an error correction circuit, and a memory controller and a memory system. The error correction circuit may include an encoder configured to generate a codeword comprising a message part, a first parity part, and a second parity part, and a decoder configured to perform error correction decoding using read values corresponding to at least a portion of the codeword, wherein, the decoder is configured to perform error correction decoding based on a first or a second error correction ability such that error correction decoding using the first error correction ability is performed using partial read values corresponding to a partial codeword including the message part and the first parity part, and error correction decoding using the second error correction ability is performed using read values corresponding to the entire codeword, and wherein the second error correction ability is greater than the first error correction ability.

Error correction circuit, and memory controller having the error correction circuit and memory system having the memory controller

Provided are a dynamic semiconductor memory device and a memory system including the same. The dynamic semiconductor memory device includes a memory cell array including a first memory cell array block including a plurality of first dynamic memory cells connected between a plurality of first word lines and a plurality of first bit lines, a second memory cell array block including a plurality of second dynamic memory cells connected between a plurality of second word lines and a plurality of second bit lines, and a sense amplification block including a plurality of sense amplifiers configured to amplify voltages of the plurality of first bit lines and voltages of the plurality of second bit lines to a first sensing supply voltage or at least one second sensing voltage higher than the first sensing supply voltage; a temperature sensor unit configured to sense a temperature and generate a temperature sensing signal; and a voltage generator configured to generate the first sensing supply voltage or the at least one second sensing supply voltage in response to the temperature sensing signal and to apply the first sensing supply voltage or the at least one second sensing supply voltage to the memory cell array and to apply a sensing ground voltage to the memory cell array.

Dynamic semiconductor memory device and memory system with temperature sensor

The present invention relates to a pharmaceutical composition for preventing or treating respiratory disease, which comprises an alcohol or organic solvent extract ofL. as an active ingredient, and to a pharmaceutical composition for preventing or treating respiratory disease, which comprises an alcohol or organic solvent extract ofL., the extract comprising any one or more of justicidin A, justicidin B, justicidin C and phyllamyricin C, and also to a food composition for preventing or treating respiratory disease, which comprises the alcohol or organic solvent extract. The composition comprising theL. extract according to the present invention may inhibit abnormal overproliferation of splenocytes, may inhibit the secretion of allergic inflammatory cytokines, and exhibits an expectorant effect and an airway constriction inhibitory effect. Thus, it may effectively prevent, treat or improve respiratory disease.

Pharmaceutical composition for preventing or treating respiratory disease comprising extract ofL

The present invention relates to a pharmaceutical composition, food composition and cosmetic composition for preventing, treating, or improving allergic diseases comprising extract or fraction of a plant of thegenus as an active ingredient. The extract or a fraction of a plant of thegenus according to the present invention can inhibit IgE antibody secretion and the degranulation of mast cells and basophils, and exhibits an excellent anti-allergic effect, and thus can effectively prevent, treat, or improve allergic diseases.

Composition containing extract or fraction of genusplant

An error correction circuit includes a decoder including a plurality of check node units and variable node units corresponding to a parity check matrix of low density parity check (LDPC) scheme, and configured to generate decoded data by decoding a codeword; a syndrome check circuit configured to calculate a reference value for the codeword based on the parity check matrix, and generate a decoder operation control signal corresponding to the reference value; and a control circuit configured to control whether to operate each of the plurality of check node units and variable node units of the decoder in response to the decoder operation control signal, wherein the decoder decodes the codeword based on check node units and variable node units which operate according to the control of the control circuit among the plurality of check node units and variable node units.

Error correction circuit and memory system including the same

A method for operating a data storage device includes providing a nonvolatile memory device including a page divided into a first half page and a second half page; dividing, when receiving data smaller than a size of a page, the data into first and second partial data; generating first and second valid data by adding metadata to the first and second partial data; generating first dummy data to be stored in the first half page together with the first valid data and second dummy data to be stored in the second half page together with the second valid data; storing the first valid data in the first half page and the second valid data in the second half page such that the first and second valid data are successive; and storing the first dummy data in an unused area of the first half page and the second dummy data in an unused area of the second half page.

Data storage device and operating method thereof

A method of manufacturing a display device, including: providing a display element layer on a substrate; forming a thin film encapsulation layer covering the display element layer; aging the thin film encapsulation layer by using a light source emitting artificial sunlight; and forming a window on the aged thin film encapsulation layer.

Manufacturing method of display device and thin-film deposition apparatus using the same

Growing community of inventors

Gyeonggi-do, South Korea

Kwang Hyun Kim