Samsung Electronics Co., Ltd.

Kwang-Hoon Kim

Ji-Hye Lee

Deok-Yong Kim

Sung-Soo Moon

Soo-Bok Chin

Choon-Shik Leem

Woong-Kyu Son

Jung-Hoon Byun

Jun-Jin Kong

Hong-Rak Son

Eun-chu Oh

Choonshik Leem

Man-Keun Seo

Do-yun Kim

Sang-Kyoo Jeong

Sung-Bo Shim

Eun-cheol Kim

Dong-Chul Ihm

Woongkyu Son

Byung Hyun Hwang

Ki-Wook Song

Woo-Young Cheon

Chulgi Song

A method of predicting a shape of a semiconductor device includes implementing a modeled semiconductor shape with respect to a designed semiconductor layout, extracting a plurality of samples by independently linearly combining process variables with respect to the modeled semiconductor shape; generating virtual spectrums with respect to ones of the extracted plurality of samples through optical analysis, indexing the virtual spectrums to produce indexed virtual spectrums, generating a shape prediction model by using the indexed virtual spectrums as an input and the modeled semiconductor shape as an output, and indexing a spectrum measured from a manufactured semiconductor device and inputting the spectrum to the shape prediction model to predict a shape of the manufactured semiconductor device.

Method of predicting shape of semiconductor device

A write operation is performed in a memory system by encoding, in the memory system, original data transmitted from a host system, according to a first type of host command, to produce an encoding result, transmitting information about the encoding result to the host system after the encoding, and writing the encoding result or the original data into a nonvolatile memory device, according to a second host command, wherein the second host command is transmitted from the host system based on the information about the encoding result.

Memory system, host system, and method of performing write operation in memory system

The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Methods for monitoring semiconductor fabrication processes using polarized light

A method for analyzing an object includes measuring a first reflectivity of light from a surface and measuring a second reflectivity of light from the object, after the object is formed on the surface. A variation between the first and second reflectivities is calculated, and the variation is transformed by a predetermined transform. A thickness of the object is determined based on the transformed variation.

Methods for measuring a thickness of an object

Apparatus and method for monitoring semiconductor fabrication processes using polarized light

A method of operating a memory controller in a memory system including a nonvolatile memory device includes; erasing memory cells of a target memory block of the non-volatile memory device on a block basis, and then searching for a bad memory cell by a performing an erase verifying operation, comparing a threshold voltage of the bad memory cell to a reference voltage to generate comparison results, and designating as a bad area one of the entire target memory block, and a sub-block of the target memory block in response to the comparison results.

Memory controller operating method and memory system including memory controller

Growing community of inventors

Yongin-si, South Korea

Kwang-Hoon Kim