Electronics and Telecommunications Research Institute

Kwang Hoon Jung

Sun Jin Yun

JungWook Lim

Jeho Na

Tae Yoon Kim

Jung Wook Lim

Seong Hyun Lee

Hyun Jun Chai

So Hyun Kim

Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

Semiconductor device and method of manufacturing the same

Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.

Method for fabricating metal chalcogenide thin films

Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

Optically restorable semiconductor device, method for fabricating the same, and flash memory device using the same

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Changwon-si, South Korea

Kwang Hoon Jung