Cj Cheiljedang Corporation

Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Sk on Co., Ltd.

Other

Sk Innovation Co., Ltd.

Massachusetts Institute of Technology

Lg Innotek Co., Ltd.

The General Hospital Corporation

The Brigham and Women's Hospital, Inc.

Children's Medical Center Corporation

Korea Research Institute of Chemical Technology

Lg Cns Co., Ltd.

Dongjin Semichem Co., Ltd.

Kwang Ho Lee

Jun Ok Moon

Young Bin Hwang

Ji Sun Lee

Seok Myung Lee

Keun Chul Lee

Keun Cheol Lee

Hyung Joon Kim

Sang Hee Park

Ki Yong Cheong

Ji Hwan Yu

Seung Hyun Cho

Hyo Jin Kim

Yeo Geon Yoon

Sang Jo Lim

Lan Huh

Eun Sung Koh

Jae Yeong Ju

Jong Soo Kim

Sang Yup Lee

Tae Yong Kim

Chang Gyeom Kim

Yong Hwan Shin

Hye Min Park

Hyun Won Bae

Joong Gun Chong

Do Hyun Kwon

Min Suk Kang

Kwang Ho Kim

Su Jin Park

Jin Hwan Park

Soo An Shin

Jong Seong Kim

Sung Hoo Jhon

Jae Woo Jang

Baek Seok Lee

Hyun Ae Bae

Chul Ha Kim

Kyungrim Kim

So Yeon Rah

Hyeong Pyo Hong

Kyung Han Lee

Jin Seok Sung

Hyeongpyo Hong

Min Cheol Beak

Ji Yae Do

Yong Kim

Yong Jae Kim

Jin Ho Lee

Haruhiko Harry Asada

Jang Hui Kim

Sang Il Kim

Ji Hoon Choi

Jik Soo Kim

Hyun Ah Kim

Kyung Ah Kim

Chang Il Seo

Kyung Do Kim

Hak Sung Kim

Seong Gyu Kwon

Chang Hun Kwak

Chong Ock Lee

Roger Dale Kamm

Young Bae Kim

Sung Yun Cho

Hyoung Rae Kim

Jeong Woo Lee

Yoon Ho Kang

Sung Soon Park

Hyo Hyoung Lee

Jae Du Ha

Seok Chung

Chi Hoon Park

Hee Jung Jung

Kwang Hyuk Lee

Yeo H Yoon

Dong Jun Lee

Su Yon Kwon

Seung Hwan Park

Dong Keun Yoon

Jeong Hoon Jeun

Youn Ha Lee

Song-Gi Ryu

Kyung Rim Kim

Sang Un Choi

In Chol Yeon

Bon Jun Koo

Waleed Ahmed Farahat

Sung Oh Chung

Byoung Joo Kim

Eun Kyung Song

Eun Ji Koh

Jae Young Choi

Kyu Soo Cho

Jeffrey D Macklis

Hawoong Jeong

Pan-Jun Kim

A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Semiconductor device including stack structure and trenches

A cathode active material for a lithium secondary battery according to an embodiment of the present disclosures a plurality of composite particles, each of which comprises a lithium metal phosphate particle, and a carbon coating formed on at least a portion of a surface of the lithium metal phosphate particle. A standard deviation of thickness values of the carbon coating measured by an X-ray photoelectron spectroscopy (XPS) for five different composite particles of the plurality of composite particles is 15 nm or less.

Cathode active material for lithium secondary battery and lithium secondary battery including the same

The cathode active material according to embodiments of the present invention includes a lithium composite oxide particle having a form of secondary particle in which a plurality of primary particle are aggregated, wherein the primary particles respectively include a lithium conduction pathway through which lithium ions are diffused. Wherein the primary particles include a first particle, and the first particle has an angle of 45° to 90° formed by a direction from a center of the first particle to a center of the lithium composite oxide particle and a direction of the lithium conduction pathway included in the first particle, wherein a ratio of the number of the first particles among the primary particles located on a surface of the lithium composite oxide particle is 20% or more.

Cathode active material and lithium secondary battery including the same

Cathode active materials for lithium secondary batteries and lithium secondary batteries including the cathode active materials are disclosed. In some implementations, a cathode active material for a lithium secondary battery includes a lithium metal phosphate particle having a crystallite size in a range from 150 nm to 450 nm in a direction of a crystallographic plane (020) as measured by an X-ray diffraction (XRD) analysis. In some implementations, a lithium secondary battery includes a cathode including a cathode active material layer that includes a cathode active material for a lithium secondary battery, and an anode facing the cathode. In some implementations, an electrode crystallite size ratio defined by Equation 4 is in a range from 0.5 to 0.9.

The present invention performs a reference point detecting step (S) to select a reference point by performing pattern analysis based on a characteristic pattern shown in a total leakage current (I) when an applied voltage is 0V, a resistive leakage current calculating step (S) to calculate a resistive leakage current by Fourier series-expanding the total leakage current (I) starting at the reference point, and reference point verifying/correcting steps (Sand S) to correct the reference point until a characteristic pattern of the resistive leakage current (I) according to non-linear resistance characteristics of the surge arrester () is shown so that the resistive leakage current (I) is recalculated, and the present invention determines that the resistive leakage current (I) calculated based on the completely corrected reference point is the resistive leakage current of the surge arrester ().

Apparatus and method for detecting resistive leakage current in surge arrester

A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Display panel and display device having the same

The present invention relates to a novel variant RNA polymerase sigma factor 70 (&#x3b4;) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Microorganism with improved L-threonine producing capability, and method for producing L-threonine by using the same

The present invention relates to a novel variant RNA polymerase sigma factor 70 (&#x3c3;) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Modified RNA polymerase sigma factor 70 polypeptide

The present invention relates to: a method for manufacturing a transparent light emitting device, which can minimize the manufacturing time of a large-area high-resolution transparent light emitting device and maximize the productivity thereof by forming an integrated metal mesh circuit pattern through a UV imprinting technology; and a transparent light emitting device manufactured thereby.

Method for manufacturing transparent light emitting device by using UV imprinting technology and transparent light emitting device manufactured thereby

The present application relates to a microorganism of the genusproducing L-tryptophan and, more specifically, to a microorganism of the genuswith improved activity of producing L-tryptophan by weakening or inactivating the activity of endogenous 6-phosphogluconate dehydratase and 2-keto-3-deoxy-6-phosphogluconate aldolase. Additionally, the present application relates to a method for producing L-tryptophan using the microorganism of the genus

Microorganism of the genusproducing L-tryptophan and method for producing L-tryptophan using the same

Provided is a method of producing-amino acids by using a recombinant coryneform microorganism in which the expression of a target gene is weakened by using a gene transcription inhibition method.

Method of producing L-amino acids

The present invention relates to a microorganism able to produce L-threonine or L-tryptophan, and to a method for producing L-threonine or L-tryptophan by using same. More specifically, the present invention relates to: recombinantwhich is more efficient in producing L-threonine or L-tryptophan by increasing the ability to produce ATP which is used as the most plentiful energy source in cells when producing L-threonine or L-tryptophan; and a method for producing L-threonine or L-tryptophan by using same.

L-threonine and L-tryptophan producing bacteria strain and method of making same

The present invention relates to a novel variant RNA polymerase sigma factor 70 (&#x3c0;) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Growing community of inventors

Daejeon, South Korea

Kwang Ho Lee