Samsung Electronics Co., Ltd.

Korea Meteorological Administration

Kwang-Ho Kim

Kwang-Jin Lee

Sang-Ho Kim

Taek-Sung Kim

Woo-Yeong Cho

Hyun-Ho Choi

Se-Ki Kim

Byung-Gil Choi

Beak-Hyung Cho

Hye-Jin Kim

Hyun-Mog Park

Seunghyun Cho

Young-Bae Yoon

Yong-Jun Lee

Tae-Hwang Kong

Qi Wang

Hyuck-Sun Kwon

Joong-Shik Shin

Young-Kug Moon

Jun-han Choi

Sung-yong Lee

Jun-hyeok Yang

Sung-Hwa Jung

Jin-hyuk Jeung

Joo-Seong Kim

Yong-jin Lee

Jihwan Yu

Chul Huh

Sang-Hun Lee

Dongjin Lee

Soyeon Park

Je-Kook Kim

Seung-Soo Yang

Min-Ho Kim

Byoung-Joo Kim

Won-Seok Lee

Young-Pil Kim

Yong-suk Kim

Hye Jin Kim

Jong-Soo Seo

Young-Goo Ko

Yeong-Jae Woo

Dong-Gi Lee

Joon-Yong Choi

Youn Sik Choi

Taek-Kyun Shin

Yu-hwan Ro

Jeong-Nam Cheon

Hyung-Jong Ko

Ho-Jin Park

Janghwan Kim

Sin-Hyung Jeon

Hwan-Jin Yong

Donghyun Song

Sang-Gi Oh

Byungse So

Kyoungsub Oh

Kwan-Jong Park

Tae-Hwa Yoo

Jong-gyu Park

Byungjin Ahn

Sang-hyuk Wi

Han-Bin Yoon

Jun-Hyeok Yang

Se-Ra An

Dong-Hyun Jeong

A method for retrieval of lost radial velocity in weather radar includes expanding a radial velocity area to non-meteorological echoes including sea clutter and chaff echo using raw radar data for use of a wind field calculation area, correcting radial velocity by replacing the radial velocity determined as noise using a median sign comparison method with a median calculated within a window to which the radial velocity belongs, distinguishing a lost radial velocity area by comparing the corrected radial velocity with radar reflectivity data, and retrieving lost radial velocity using a Velocity Azimuth Display (VAD) fit function representing radial velocity of particles observed along a radar radiation source at a certain elevation in the lost radial velocity area as a function of an azimuth angle. Accordingly, it is possible to improve the quality of calculated wind field using the improved radar radial velocity, and provide more accurate dynamic structure information of the precipitation system.

Method for retrieval of lost radial velocity in weather radar, recording medium and device for performing the method

A precipitation nowcasting method using dynamic motion vectors includes calculating a multiscale motion vector of a radar precipitation motion vector and a numerical model precipitation motion vector by changing spatial scale of cross correlation analysis for reach of a preset time interval from precipitation data obtained through a dual polarization radar, calculating a dynamic motion vector by merging the radar precipitation motion vector and the numerical model precipitation motion vector, generating a precipitation development and dissipation map through precipitation tracking and matching using the dynamic motion vector, and outputting a precipitation forecast field for each forecast time by applying the dynamic motion vector and the precipitation development and dissipation map to Lagrangian backward extrapolation. Accordingly, it is possible to achieve realistic precipitation forecast field simulation.

Method for precipitation nowcasting using dynamic motion vectors, recording medium and device for performing the method

A reference voltage generating circuit includes: an operational amplifier including a first input terminal connected to a first node and a second input terminal connected to a second node; a first transistor connected between a ground terminal and the first node, wherein a first current flows in the first transistor; a second transistor connected to the ground terminal; and a first variable resistor connected between the second transistor and the second node, wherein the first variable resistor has a first resistance value for adjusting the first current, based on a change in a current characteristic of the first transistor caused by a variation in a process of forming the first transistor. The reference voltage generating circuit provides a reference voltage, based on a voltage of the first node and a voltage across the first variable resistor.

Reference voltage generating circuit method of generating reference voltage and integrated circuit including the same

A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

Semiconductor device for monitoring a reverse voltage

A vertical memory device includes a channel, gate lines, and a cutting pattern, respectively, on a substrate. The channel extends in a first direction substantially perpendicular to an upper surface of the substrate. The gate lines are spaced apart from each other in the first direction. Each of the gate lines surrounds the channel and extends in a second direction substantially parallel to the upper surface of the substrate. The cutting pattern includes a first cutting portion extending in the first direction and cutting the gate lines, and a second cutting portion crossing the first cutting portion and merged with the first cutting portion.

Vertical memory devices and methods of manufacturing the same

Disclosed is a three-dimensional semiconductor device including a stack structure on a substrate and including electrodes that are vertically stacked on top of each other on a first region of a substrate, a vertical structure penetrating the stack structure and including a first semiconductor pattern, a data storage layer between the first semiconductor pattern and at least one of the electrodes, a transistor on a second region of the substrate, and a first contact coupled to the transistor. The first contact includes a first portion and a second portion on the first portion. Each of the first portion and the second portions has a diameter that increases with an increasing vertical distance from the substrate. A diameter of an upper part of the first portion is greater than a diameter of a lower part of the second portion.

Three-dimensional semi-conductor memory devices including a first contact with a sidewall having a stepwise profile

Various embodiments of the present disclosure provide an antenna device and/or an electronic device including the antenna device. The antenna device may include: a circuit board; a conductive layer disposed in a partial region of the circuit board; a first radiation conductor disposed at one side of the conductive layer on the circuit board; and second radiation conductors disposed at one side of the conductive layer on the circuit board, the second radiation conductors being respectively disposed at opposite sides of the first radiation conductor to be symmetrical to each other. The first radiation conductor may transmit or receive a wireless signal in a first frequency band, and the second radiation conductors may transmit or receive a wireless signal in a second frequency band that is different from the first frequency band.

Antenna device and electronic device including the same

Three-dimensional semiconductor memory devices including first contact having a stepwise profile at interface between two portions

A semiconductor device includes: an integrated circuit (IC) including an internal circuit; and a mismatch detection and correction circuit connected to the internal circuit of the IC, the mismatch detection and correction circuit configured to detect a process mismatch and correct an error in the internal circuit caused by the process mismatch using a current difference between a first current and a second current based on a charged voltage of a capacitor.

Semiconductor device having a mismatch detection and correction circuit

A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.

Thermoelectric element, method of manufacturing the same and semiconductor device including the same

A user device is provided. The device includes a main power supply, and an auxiliary power supply. The main power supply provides a main power. The auxiliary power supply cuts off the main power according to a power level of the main power supply and provides an auxiliary power upon Sudden Power-Off (SPO).

Auxiliary power supply and user device including the same

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

Semiconductor storage device and method of throttling performance of the same

A mobile device and a computational system including same are described. The mobile device includes a sensor unit having a motion sensor and/or a touch sensor that provides sensing information. The sensing information is applied to a universal serial bus user interface (USB UI) data generation unit and is changed into USB UI data before being output as USB UI data using a USB communication technique.

Mobile device and computational system including same

Growing community of inventors

Hwaseong-si, South Korea

Kwang-Ho Kim