Samsung Electronics Co., Ltd.

Kwang-Ho Cha

Tai-Kyung Kim

Ui-hui Kwon

Seung-Ki Chae

Jae-woo Lee

Young-Tae Kim

Gyeong-Su Keum

Won-Young Chung

Byoung-Soo Lee

Young-Min Kang

Gyeong-su Keum

Won-young Chung

Jai-hyung Won

Kwang-Soo Han

Young-kwan Park

Front cover of an electronic device

A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.

Filament member, ion source, and ion implantation apparatus

An ion source section of ion implantation equipment for ionizing reaction gas in an ion implantation process of semiconductor manufacturing processes is disclosed. The ion source section includes a source aperture member separable from an arc chamber and having an ion-discharging hole through which the ion beam discharges. The source aperture member consists of a first plate, a second plate adjacent to the first plate and facing the arc chamber, and a third plate to protect the exposed second plate from the ionized reaction gas.

Ion source section for ion implantation equipment

The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Ion implanters having an arc chamber that affects ion current density

A technique is disclosed for detecting a turbo pump drive state in a tendetron accelerator that accelerates an ion beam to implant ions onto a semiconductor wafer. In particular the method of detecting a turbo pump driving state in the accelerator includes the steps of detecting a current applied to the turbo pump in the accelerator; converting the detected current to an optical signal to transmit it through an optical fiber; converting the optical signal transmitted through the optical fiber to an electric signal; displaying the current value of the converted electric signal; comparing the current value of the converted electric signal with a setting current value to generate an interlocking signal when the current value is out of a given range of the setting current value; and cutting off a power supply of the tendetron accelerator in accordance with the interlocking signal.

Device and method for detecting the drive state of a turbo pump in a tandetron accelerator of an ion implantation device

Growing community of inventors

Gyeonggi-do, South Korea

Kwang-Ho Cha