Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Korea Institute of Industrial Technology

Kwang-hee Lee

Jong-jin Park

Jang-yeon Kwon

Xavier Bulliard

Kyoung-seok Son

Ji-sim Jung

Yun-hyuk Choi

Kyung Bae Park

Sang-Yoon Lee

Yong-wan Jin

Kyung-bae Park

Woong Il Choi

Kyu-sik Kim

Do-hwan Kim

Tae-gwan Park

Kwang-sup Lee

Yong Wan Jin

Gae Hwang Lee

Kyung Ho Lee

Dong-Seok Leem

Chang-seung Lee

Jin Ho Seo

Kyu Sik Kim

Jae-cheol Lee

Tae-sang Kim

Yun Kyung Kim

Ji-Hoon Jung

Hirosige Goto

Sang Chul Sul

Jun-taek Lee

Kyo Jin Choo

Won-jae Joo

Sang-Hoon Ji

Byung-hyun Yim

Duck-june Kim

Woong-hee Shon

Sang-moo Lee

Kyung-tae Nam

Yu-han Lee

Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same

Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

Organic pixels including organic photodiode, manufacturing methods thereof, and apparatuses including the same

Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first light-transmitting electrode present in the semiconductor substrate, an organic photoelectric conversion layer positioned on one side of the semiconductor substrate and absorbing light in a different wavelength from the wavelength sensed by the photo-sensing device, and a second light-transmitting electrode positioned on one side of the organic photoelectric conversion layer, and an electronic device including the same.

Image sensor and electronic device including the same

A gas barrier thin film having a substrate, an anchoring layer, and an inorganic oxide layer, the anchoring layer including a silicon-containing organic-inorganic composite copolymer comprising a repeating unit of the formula&#x2014;(SiO)&#x2014;,a repeating unit of the formula&#x2014;(SiRR&#x2014;NR)&#x2014;,and at least one or a combination of repeating units of the formulas wherein at least one of R, R, and Ris independently hydrogen, R, R, and Rare each independently C-Calkyl, C-Calkenyl, C-Calkynyl, C-Calkoxyl, or C-Caryl, R, R, R, and Rare each independently hydrogen, C-Calkyl, C-Calkoxyl, C-Ccycloalkyl, or C-Caryl, Rand Rare not simultaneously hydrogen, Rand Rare not simultaneously hydrogen, n+m+r=1, 0&#x3c;n&#x3c;1, 0&#x3c;m&#x3c;1, and 0&#x3c;r&#x3c;1, 'n', 'm', and &#x2018;r&#x2019; are each a molar ratio, &#x2018;r&#x2019; is p, q, or p+q, and a degree of polymerization is about 1,000 to about 1,000,000.

Gas barrier thin film, electronic device comprising the same, and method of preparing the gas barrier thin film

Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Switching device of active display device and method of driving the switching device

An organic material including a hydrophilic polymer and an organic moiety having a hydroxyl substituted C-Caromatic functional group, the organic moiety binding to an end or a side of the hydrophilic polymer.

Organic material, film comprising the same and electric device comprising the film

An imaging apparatus includes: a rotator having a shape of a perforated circular plate and rotating around a rotating axis of a center of the perforated circular plate; and a supporter having a perforated circular plate and one side of which is connected to one side of the rotator such that the rotator is restricted only to rotation movement. The supporter includes a supporter opening/closing part a part of which is separated along the rotating axis and then rotates by a predetermined angle around the rotating axis, and the rotator includes a rotator opening/closing part a part of which integrally moves with the supporter opening/closing part.

Opening and closing module, control method for the same, imaging apparatus using the same

Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

Transistor, method of manufacturing the transistor and electronic device including the transistor

A dispersible carbon nanotube ('CNT') comprising a CNT backbone and an organic moiety attached to the carbon nanotube backbone and comprising a hydroxyl substituted Cto Caromatic group are described, as well as a CNT-polymer composite and a method of manufacturing the CNT-polymer composite.

Dispersible carbon nanotube, carbon nanotube-polymer composite and method of manufacturing the carbon nanotube-polymer composite

A method of operating an image pickup system includes generating a first control signal in response to a long duration exposure mode selectively input by a user, setting circuits to process image data associated with modes other than long duration exposure mode to a standby mode in response to the first control signal, generating a second control signal when the standby mode has been established, opening a shutter in response to the second control signal, and performing a long duration exposure to accumulate a charge corresponding to an optical signal incident on an image sensor of the image pickup system when the shutter is open.

Method of economizing power in image pickup system and image pickup system using the method

A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties includes silicon (Si) and a photosensitive functional group. Also disclosed are a composition for forming a quantum dot-containing pattern, where the composition includes the photosensitive quantum dot, and a method of forming a quantum dot-containing pattern using the composition.

Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition

A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.

Method of detecting defects in image sensor, tester for the method, and control signal generator for the method

A composition for radical polymerization includes a photosensitive material, a photoinitiator, a solvent, and a material for adjusting a size of a pattern. A method of forming a pattern using the composition is also disclosed.

Composition for radical polymerization and method of forming pattern using the composition

Growing community of inventors

Suwon-si, South Korea

Kwang-hee Lee