Samsung Electronics Co., Ltd.

Korea Institute of Industrial Technology

Cheil Industries Inc.

Shinshu University

Samsung Corning Co., Ltd.

Shin Won Chemical Co., Ltd.

Shin Won Industrial Co., Ltd.

Kwang Hee Lee

Dong-Seok Leem

Yong Wan Jin

Gae Hwang Lee

Kyung Bae Park

Sung Young Yun

Seon-Jeong Lim

Kyu Sik Kim

Tadao Yagi

Xavier Bulliard

Sang Kyun Lee

Won Jae Joo

Chul Joon Heo

Hyesung Choi

Takkyun Ro

Tae Lim Choi

Rie Sakurai

Moon Gyu Han

Yeong Suk Choi

Ohkyu Kwon

Jin Heong Yim

Bum Woo Park

Hiromasa Shibuya

Hwang Suk Kim

Hyeon Jin Shin

Yi Yeol Lyu

Myung Sup Jung

Dongseon Lee

Sang Kook Mah

Yoon Sok Kang

Jong Jin Park

Deukseok Chung

Jung Yoon Kim

Jong Kug Seon

Hyun Jun Jeong

Chulhee Kim

Yun Hyuk Choi

Tatsuya Imase

Seon Jeong Lim

Sangyoon Lee

Jung Woo Kim

Jae Jun Lee

Bum Suk Kim

Dong Kyu Lee

Jun Sung Park

Satoh Ryuichi

Dong Min Keum

Chil Hee Chung

Tae Sung Lee

Sakurai Rie

Kyung Tae Nam

Dong Seok Leem

Seung Joon Lee

Sungdong Suh

Sang Yoon Lee

Tae Young Choi

Kyung Ho Lee

Jae Young Choi

Alan J Heeger

Do Hwan Kim

Jin Ho Seo

Seong Jae Choi

Yun Ki Lee

Kyung-bae Park

Young Gu Jin

Woong Il Choi

Yun Kyung Kim

Tae Han Kim

Musubu Ichikawa

Younsuk Choi

Youn Hee Lim

Ryuichi Satoh

Youngchun Kwon

Hirosige Goto

Sang Chul Sul

Hyun Dam Jeong

Chui Joon Heo

Bulliard Xavier

Kyo Jin Choo

Seok Mo Chang

Toshiki Takeuchi

Jae Geun Park

Mi Jeong Song

Satoko Ishibe

Ji Man Kim

Hee Soo Kim

Sang Moo Lee

Won Joo Kim

Shinuk Cho

Sung Yeon Kim

Sung Won Choo

Jong Back Seon

Hye Sung Choi

Tae Llm Choi

Seok Keun Song

In Sik In

An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.

Image sensor having pixels with different light receiving areas

An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

Image sensor with varying same-color color filter thickness

A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar, Ar, Ar, Ar, Ar, X, X, L, L, R, and Rare the same as defined in the detailed description.

Near-infrared absorbers, near-infrared absorbing/blocking films, photoelectric devices, organic sensors, and electronic devices

An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

Image sensors and electronic devices

An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

Organic light emitting diode panels and display devices including the same

Disclosed are a compound represented by Chemical Formula 1, a film, a photoelectric diode, an organic sensor, and an electronic device. In Chemical Formula 1, Arand Ar, Z, L, L, and Rto Rare the same as defined in the detailed description.

Compound and film and photoelectric diode and organic sensor and electronic device

A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar, Ar, X, L, L, R, R, R, and Rare the same as defined in the detailed description.

Near-infrared absorbers, near-infrared absorbing/blocking films and photoelectric devices and organic sensors and electronic devices

An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.

Organic image sensors without color filters

A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X, X, Y, Y, Ar, Ar, and Arare the same as defined in the detailed description.

Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.

Non-invasive biometric sensor based on organic photodetector

A multi-prober chuck assembly and channel are provided. The multi-prober chuck assembly, according to one embodiment of the present invention, comprises: a chuck for supporting a wafer; a probe card structure coupled to the top part of the chuck; a heater for heating the chuck under the chuck; a conductive guard plate spaced apart from the heater below the heater; and a body part positioned under the chuck so that the heater and the guard plate are positioned inside the body part, wherein the probe card structure and the body part are coupled mechanically to form a cartridge-type structure.

Multi-prober chuck assembly and channel

A composition may include a compound, a film may include the composition, an organic layer of an organic sensor and/or photoelectric diode may include the compound, and the film, organic sensor, and/or photoelectric diode may be included in an electronic device.

Compounds and films and photoelectric diodes and organic sensors and electronic devices

A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.

Sensors having visible and near infra-red light sensors and optical filter and electronic devices including same

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

Organic photoelectronic device and image sensor

An OLED panel may be embedded with a near-infrared organic photosensor and may be configured to implement biometric recognition without an effect on an aperture ratio of an OLED emitter. The OLED panel may include a substrate, an OLED stack on the substrate and configured to emit visible light, and an NIR light sensor stack between the substrate and the OLED stack and including an NIR emitter configured to emit NIR light and an NIR detector. The OLED panel may be included in one or more various electronic devices.

Near-infrared light organic sensors, embedded organic light emitting diode panels, and display devices including the same

Growing community of inventors

Yongin-si, South Korea

Kwang Hee Lee