University of California

Japan Science and Technology Agency

Kwang-Choong Kim

Steven P DenBaars

James Stephen Speck

Shuji Nakamura

Mathew C Schmidt

Umesh Kumar Mishra

Arpan Chakraborty

Daniel F Feezell

Robert M Farrell

Daniel A Cohen

Hitoshi Sato

Hisashi Masui

A method for fabricating AlGaN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiN) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNnanomask layer.

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices

Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.

Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers

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Seoul, South Korea

Kwang-Choong Kim