Samsung Electronics Co., Ltd.

Kwan-Yeob Chae

Sang-Hune Park

June-Hee Lee

Sang-Heon Lee

Jong-Ryun Choi

Jun-Ho Huh

In-Tae Kang

Ho-Rang Jang

Seok-Chan Kim

Jae-Chol Lee

Hyung-Kweon Lee

Hyung-kweon Lee

Won Seok Lee

Sang-hoon Joo

Su-ho Kim

Dharmendra Pandit

Shin-young Yi

Sang-Hoon Joo

Hoon-Koo Lee

To design an integrated circuit, input data defining an integrated circuit are received, and a plurality of load standard cells having different delay characteristics are provided in a standard cell library. Placement and routing are performed based on the input data and the standard cell library and output data defining the integrated circuit are generated based on a result of the placement and the routing. Design efficiency and performance of the integrated circuit are enhanced by designing the integrated circuit with delay matching and duty ratio adjustment using the load standard cell.

Integrated circuit including load standard cell and method of designing the same

A modem chip communicates with a radio frequency (RF) chip and includes a digital interface configured to receive data including a plurality of samples from the RF chip based on digital communication. A logic block generates a frame synchronization signal based on a clock signal in the modem chip, provides the generated frame synchronization signal to the digital interface, and receives the plurality of samples in synchronization with the frame synchronization signal.

Modem and RF chips, application processor including the same and operating method thereof

A delay-locked loop (DLL) circuit and an integrated circuit (IC) including the same are provided. The DLL circuit includes a pre-processing circuit configured to generate a first pulse signal and a second pulse signal based on a clock signal input, the first pulse signal and the second pulse signal having a phase difference of (s/2) times a clock period of the clock signal (where s is a positive integer), a delay line configured to generate a delay signal by delaying the first pulse signal by a delay amount corresponding to a selection value, a phase detector configured to detect a phase difference between the delay signal and the second pulse signal, and a control logic configured to adjust the selection value based on the phase difference between the delay signal and the second pulse signal as detected by the phase detector, so as to synchronize the delay signal with the second pulse signal.

Delay locked loop circuit and integrated circuit including the same

A delay cell includes first through fifth inversion circuits. The first inversion circuit inverts an input signal, and an output electrode of the first inversion circuit is coupled to a first node. The second inversion circuit is turned on in response to a control signal, and inverts the input signal when turned on. An output electrode of the second inversion circuit is coupled to the first node. The third inversion circuit inverts a signal at the first node, and an output electrode of the third inversion circuit is coupled to a second node. The fourth inversion circuit is turned on in response to the control signal, and inverts the signal at the first node when turned on. An output electrode of the fourth inversion circuit is coupled to the second node. The fifth inversion circuit inverts a signal at the second node to generate an output signal.

Delay cell and delay line having the same

The memory interface circuit may include a master delay unit and a slave delay unit. The master delay unit generates a control signal for controlling a delay time based on a clock signal. The slave delay unit selects one signal of an inversion signal of the clock signal and a data strobe signal in response to a mode signal and delays the selected signal in response to the control signal. The slave delay unit selectively outputs a delayed clock signal that may be delayed by a first phase with respect to the clock signal or a delayed data strobe signal that may be delayed by a second phase with respect to the data strobe signal.

Memory interface circuit and memory system including the same

A duty control circuit including a clock input unit connected to a first node and a second node, the clock input unit receiving an input clock signal through the first node and changing a voltage of the second node to one of a first voltage level and a second voltage level in response to respective low and high logic levels of the input clock signal, a slew controller connected to the second node, the slew controller including one or more switches controlled by respective control signals, the one or more switches providing one of the first voltage level and the second voltage level to the second node in response to the control signals such that a slew rate of a signal at the second node is varied, and a clock output unit, the clock output unit outputting an output clock signal having a duty that varies.

Duty control circuit and semiconductor device having the same

In a data processing apparatus and method using a first-in first-out (FIFO), the data processing apparatus includes a first sampling circuit, a delay circuit, and a FIFO device. The first sampling circuit samples a logic state of input data in response to a first edge of a first clock signal and holds a result of the sampling. The delay circuit receives and delays the first clock signal by a predetermined delay time and outputs a second clock signal. The FIFO device processes the result of the sampling output from the first sampling circuit using a FIFO method in response to a first edge of the second clock signal output from the delay circuit.

Data processing apparatus and method using FIFO device

A delay locked loop that controls a delay time period by using a shifter and an adder includes a master delay locked loop and a slave delay locked loop. The master delay locked loop outputs a first digital value corresponding to one clock cycle of a first input clock signal. The slave delay locked loop receives the first digital value and delays a second input clock signal for a time period smaller than the one clock cycle of the first input clock signal. The slave delay locked loop includes a shifter, an operator, and a variable delay circuit. The shifter shifts the first digital value to generate a second digital value. The operator adds or subtracts an offset value to or from the second digital value to generate a third digital value, wherein the offset value varies according to a process, a voltage, and a temperature (PVT). The variable delay circuit delays the second input clock signal for a time period corresponding to the third digital value.

Delay locked loop for controlling delay time using shifter and adder and clock delaying method

A memory controller with a self-test function includes a test controlling unit configured to generate test data in a test mode, a data transmission unit configured to generate a data read timing signal to transmit the data read timing signal and the generated test data synchronized with the data read timing signal, and a data input/output (I/O) unit configured to feedback the transmitted test data and the transmitted data read timing signal to the data transmission unit, such that the data transmission unit receives fed-back test data and a fed-back data read timing signal. The data transmission unit reads the fed-back test data based on the fed-back data read timing signal, and the test controlling unit compares the fed-back test data with the generated test data. Therefore, the memory controller may perform a fast self-test.

Memory controller with a self-test function, and method of testing a memory controller

Delay line circuits include a plurality of delay cells connected in series. The delay cells respectively include a first to a third logic gate. The first logic gate, in response to a selection signal, generates a first signal based on an input signal. The second logic gate generates a second signal based on the input signal in response to the selection signal. The third logic gate generates a third signal based on either a return signal or an output signal of the second logic gate.

Delay cells and delay line circuits having the same

A dual data rate (DDR) output circuit has first and second data paths therein that are asymmetric. The first data path is provided through a single-stage latch unit and the second data path is provided through a dual-stage flip-flop device containing a cascaded arrangement of two latch units. The DDR output circuit includes a latch unit, a flip-flop and a buffer circuit. The latch unit is configured to latch-in first data in-sync with a first edge of a clock signal and the flip-flop is configured to latch-in second data in-sync with the first edge of the clock signal. A buffer circuit is also provided. The buffer circuit is electrically coupled to an output of the latch unit and an output of the flip-flop. The buffer circuit is configured to generate the first data at an output terminal of the DDR output circuit in-sync with one edge (e.g. rising or falling) of the clock signal and further configured to generate the second data at the output terminal in-sync with another edge (e.g., falling or rising) of the clock signal.

Integrated circuit devices having dual data rate (DDR) output circuits therein

A logic circuit combining an exclusive OR gate and an exclusive NOR gate is provided. The logic circuit includes an NMOS transistor, a PMOS transistor, and first and second inverters. The NMOS transistor has a source connected to a first input signal, a drain connected to a first output signal, and a gate connected to a second input signal. The PMOS transistor has a source connected to the first input signal, a drain connected to a second output signal, and a gate connected to the second input signal. The first inverter receives the first output signal and outputs the second output signal. The second inverter receives the second output signal and outputs the first output signal.

Logic circuit combining exclusive OR gate and exclusive NOR gate

Delay lines include an adjustable delay cell that adjusts a speed at which an input signal to the adjustable delay cell is transmitted through the adjustable delay cell responsive to a control signal. A plurality of set delay cells are coupled in series with the adjustable delay cell that delay transmission through the set delay cells of an input signal to the respective set delay cells an amount that does not vary responsive to the control signal. Delay cells that have an adjustable delay time are also provided.

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Seoul, South Korea

Kwan-Yeob Chae