Samsung Electronics Co., Ltd.

Kwan-Tack Lim

Seung-Yong Lee

Dong-Uk Choi

Young-Chul Park

Yong-suk Choi

Jae-Yeon Lee

Joon-Woo Lee

Jae-kyeong Lee

Kyu-sang Kim

Hong-Je Cho

Jin-Su Kim

Kyu-Sang Kim

Seung-Hwan Chon

The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (HPO), 0.5 to 15 wt % of nitric acid (HNO), 2 to 15 wt % of acetic acid (CHCOOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO)).

Etchant composition and manufacturing method for thin film transistor array panel

A TFT array panel having signal lines of low resistivity is presented. The TFT array panel includes a substrate; a gate line including a gate electrode formed on the substrate and having a single-layered structure; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a barrier layer formed on the semiconductor layer and including nitrogen; a data line including a source electrode formed on the barrier layer and having a single-layered structure; a drain electrode formed on the barrier layer, spaced apart from the source electrode and having a single-layered structure; and a pixel electrode electrically connected to the drain electrode. The TFT array panel may include contact holes extending to the end portions of the gate line, the data line, and the drain electrode, and molybdenum or molybdenum alloy buffer members in the contact holes.

Thin film transistor panel and manufacturing method thereof

An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as HPO, HNO, CHCOOH, HClO, HO, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO), potassium bisulfate (KHSO), and potassium sulfate (KSO) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.

Etchant composition for indium oxide layer and etching method using the same

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Suwon-si, South Korea

Kwan-Tack Lim