Skhynix Inc.

S Hynix Inc.

Kwan Su Shon

Yo Han Jeong

Soon Sung An

Eun Ji Choi

Dong Hyun Kim

Dae Ho Yang

Jin Ha Hwang

Keun Seon Ahn

Jaehyeong Hong

Tae Jin Hwang

Soon Young Kang

In Seok Kong

Jun Sun Hwang

Junseo Jang

Dong Shin Jo

Min Su Kim

Jung Hwan Lee

Dae Han Kwon

Hyun Bae Lee

Jae Young Park

Sung Hwa Ok

Kyeong Min Chae

Jae Hoon Jung

Doo Bock Lee

Jae Hyeong Hong

Dong Wook Jang

Jun Seo Jang

Jung Hyun Shin

Woo Jin Kang

Gwan Woo Kim

Soon Ku Kang

Jong Hun Lim

Byung Joo Hwang

Su Han Lee

A signal generation apparatus includes a glitch rejection circuit including n m-stage inverters coupled in series, and configured to receive an input signal and perform an inverting operation on the input signal, based on a plurality of voltage signals, to generate an output signal and adjust switching threshold voltages of the m-stage inverters, based on the plurality of voltage signals, to generate the glitch-removed output signal, when a glitch occurs in the input signal, a level detection circuit to detect a logic level of the output signal provided from the glitch rejection circuit to generate a level detection signal and a complementary level detection signal, and a voltage signal generation circuit configured to receive the input signal, a complementary input signal, the level detection signal, and the complementary level detection signal to generate the plurality of voltage signals and provide the plurality of voltage signals to the glitch rejection circuit.

Signal generation apparatus capable of rejecting noise

A duty cycle correction device includes a duty cycle correction circuit and a duty cycle control circuit. The duty cycle correction circuit corrects a duty cycle of an input dock signal based on a duty cycle control signal and a duty cycle resolution control signal to generate an output dock signal. The duty cycle control circuit generates the duty cycle control signal by detecting a duty cycle of the output clock signal, generates a duty cycle correction completion signal when duty cycle correction is completed, and recorrects the duty cycle of the input clock signal by activating the duty cycle resolution control signal when the duty cycle correction completion signal is activated at an earlier timing than a reference time.

Duty cycle correction device and method

A semiconductor device includes a data input circuit suitable for receiving a training clock to provide first data signals and a strobe signal according to a plurality of input control signals in a training mode; a delay circuit suitable for outputting second data signals by delaying the first data signals according to delay values corresponding to respective setting codes; a data alignment circuit suitable for outputting third data signals by aligning the second data signals according to the strobe signal; a code generation circuit suitable for generating a preliminary code corresponding to the third data signals according to the training clock, and sequentially storing the preliminary code as the setting codes according to a code-lock signal; and a lock-detection circuit suitable for activating the code-lock signal based on the training clock and the preliminary code.

Semiconductor device performing training operation and operating method thereof

A duty cycle correction circuit includes a duty correction circuit, an information generation circuit and a duty control circuit. The duty correction circuit corrects a duty rate of an input clock signal based on a duty control code to generate an output clock signal. The information generation circuit compares a difference between operation power voltages based on an operation mode to generate voltage information. The duty control circuit receives the voltage information from the information generation circuit and generates the duty control code that includes the voltage information based on a duty rate of the output clock signal.

Duty cycle correction circuit and method of operating the same

The present technology may include a first detection unit configured to generate an output signal by detecting a level of an input terminal in response to a transition of a control clock signal during a normal read operation, and a second detection unit configured to generate the output signal by detecting the level of the input terminal regardless of the transition of the control clock signal during a state information read operation.

Latch circuit, transmission circuit including latch circuit, and semiconductor apparatus including transmission circuit

The present disclosure relates to a memory device for correcting a pulse duty ratio and a memory system including the same, and relates to a memory device which corrects the duty ratio of a primary pulse of a memory device control signal, and a memory system including the same.

Memory device for correcting pulse duty and memory system including the same

A data input buffer includes a plurality of buffer units configured to receive a first impedance calibration code and a second impedance calibration code, wherein each of the plurality of buffer units outputs an offset detected with a first input terminal and a second input terminal thereof short-circuited, as write data, and wherein a buffer unit corresponding to a current value of the first impedance calibration code among the plurality of buffer units is configured to correct the offset according to the second impedance calibration code.

Data input buffer and semiconductor apparatus including the same

Devices and methods for detecting and correcting duty cycles are described. An input switching unit is configured to perform at least one of an operation of outputting differential input signals as a first combination of first and second output signals and an operation of outputting the differential input signals as a second combination of the first and second output signals, according to one of a plurality of control signals. A comparator is configured to receive the first output signal through a first input terminal thereof, to receive the second output signal through a second input terminal thereof, to generate duty detection signals by comparing the signal of the first input terminal and the signal of the second input terminal according to at least another one of the plurality of control signals, and to adjust an offset of at least one of the first input terminal and the second input terminal.

Duty cycle detection circuit and duty cycle correction circuit including the same

A signal receiving device may include a high-speed receiving circuit, a low-speed receiving circuit, a low-speed synchronization circuit and a low-speed synchronization circuit. The high-speed receiving circuit receives an input signal and generate a high-speed received signal in a first operation mode. The high-speed synchronization circuit generates a high-speed synchronized signal to synchronize the high-speed received signal with a clock signal. The low-speed receiving circuit receives the input signal and generate a low-speed received signal in a second operation mode. The low-speed synchronization circuit generates a low-speed synchronized signal to synchronize the low-speed received signal with the clock signal. According to an operation mode, one of the high-speed synchronized signal and the low-speed synchronized signal is selected as an internal signal.

Signal receiving device, and a semiconductor apparatus and a semiconductor system including the signal receiving device

The present technology relates to an electronic device. A storage device in which a memory device controls an ODT operation to improve operation performance of the memory device with a small number of pins includes a plurality of memory devices comprising a target memory device in which an operation is performed and non-target memory devices, and a memory controller configured to control the plurality of memory devices. Each of the plurality of memory devices includes an on die termination (ODT) flag generator configured to generate a flag that indicates that an ODT operation is possible for the non-target memory devices, and an ODT performer configured to determine whether the ODT operation is an ODT read operation for a read operation or an ODT write operation for a write operation based on the flag and configured to generate an enable signal that enables the ODT read operation or the ODT write operation.

Storage device and method of operating the same

A semiconductor apparatus includes a first receiver, a second receiver, a first delay line, and a second delay line. The first receiver receives an input signal using a first supply voltage. The first delay line delays an output of the first receiver based on a first delay control signal and a first complementary delay control signal to generate a received signal. The second receiver receives a clock signal using a second supply voltage. The second delay line delays an output of the second receiver based on a second delay control signal and a second complementary delay control signal to generate a received clock signal. Delay amounts of the first and second delay lines are complementarily changed based on the first and second supply voltages.

Semiconductor apparatus and a semiconductor system capable of adjusting timings of data and data strobe signal

Provided is a calibration circuit and operating method of the calibration circuit. A calibration circuit includes a first resistor code output circuit and a second resistor code output circuit. The first resistor code output circuit is coupled to an external resistor through an input/output pad, performs a first calibration operation, based on a first resistor value, such that a target voltage applied to a first reference node coupled to the input/output pad has a set voltage level, and outputs a first resistor code as a result obtained by performing the first calibration operation. The second resistor code output circuit receives the target voltage, sets an internal resistor value, based on the first resistor code, performs a second calibration operation, based on a second resistor value different from the first resistor value, and outputs a second resistor code as a result obtained by performing the second calibration operation. The first resistor value is a resistor value of the first resistor.

Calibration circuit and operating method of the calibration circuit

A data transfer circuit and a memory device including the data transfer circuit are provided. The data transfer circuit includes a first regulator provided with an external voltage to output a first internal voltage; a second regulator configured in a same manner as the first regulator and provided with the external voltage to output a second internal voltage; an amplifier configured for amplifying noise between the first internal voltage and the second internal voltage to output an amplification voltage; and a plurality of peripheral circuits performing by being provided with the first internal voltage.

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Icheon-si, South Korea

Kwan Su Shon