Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Kwan Sik Kim

Min Jun Choi

Doo Won Kwon

Tae Young Song

Sung Hyun Yoon

Chang Hwa Kim

Sang Su Park

Man Geun Cho

Seung Hoon Choi

Beom Suk Lee

In Gyu Baek

Il Young Yoon

Bo Yun Kim

Dong Chan Kim

Eun Sung Seo

Changhwa Kim

Woo-Sik Kim

Sang-Su Park

Hong Ki Kim

Jae Sung Hur

Jin Hyung Kim

An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

Image sensor and method for fabricating the same

A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Image sensing apparatus

An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

Method of manufacturing an image sensor having an etch stop layer on an insulation layer

An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

Image sensor

An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Image sensor and image sensing appartatus

Image sensor having an etch stop layer on the insulation layer

Image sensing apparatus and manufacturing method thereof

A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

Semiconductor device having a structure for insulating layer under metal line

A transmission power detecting apparatus of a CDMA system is disclosed by which since the power detection of the RF CDMA signal is digitally performed and no RF device (an RSSI detector) which is sensitive to a temperature change is used, a power of the RF CDMA signal can be more accurately detected. In addition, since an IF analog CDMA signal to be measure is sampled and then an average power of the sampled digital IF CDMA signal is obtained, accuracy in power detection and transmission power adjustment can be accomplished. Moreover, since the power of the baseband digital CDMA signal containing a traffic is detected to provide a reference value for adjusting the power of the RF CDMA signal, an error generated in determining a power of the RF CDMA signal as in the conventional art can be reduced.

Apparatus for detecting and adjusting transmission power of CDMA system

Growing community of inventors

Seoul, South Korea

Kwan Sik Kim