Samsung Display Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Basf Coatings Gmbh

Kwan Hyuck Yoon

Myung Mo Sung

Oh June Kwon

Jeong Seok Lee

Felix Eickemeyer

Daniel Loeffler

Maraike Ahlf

Stephan Klotz

Jurgen Frank

Kyu-Seok Han

Juergen Frank

Jürgen Frank

Hye Kyun Lee

Daniel Loffler

Daniel LÖFFLER

The present disclosure relates to a display device, and a display device according to an embodiment includes a substrate, a transistor disposed on the substrate, a light emitting element connected to the transistor, an encapsulation layer disposed on the light emitting element, a sensing electrode disposed on the encapsulation layer, a first insulating layer disposed on the sensing electrode and including an opening, a second insulating layer disposed on the first insulating layer, and a third insulating layer disposed on the second insulating layer, wherein a refractive index of the third insulating layer is higher than that of the second insulating layer.

Display device

The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.

Process for producing flexible organic-inorganic laminates

A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.

Transparent active layer, thin film transistor comprising same, and method for manufacturing same

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Seoul, South Korea

Kwan Hyuck Yoon