Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Kwadwo E Tettey

Naresh Kumar Penta

Matthew Richard Van Hanehem

Yi Guo

David Wayne Mosley

Koichi Yoshida

Bryan E Barton

Kyohei Yoshida

Jing Ren

The present invention provides CMP polishing pads or layers having a unfilled Shore D (2 second) hardness of from 57-77 or a filled Shore D (2 second) hardness of from 18-50, made from a two-component reaction mixture of (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer having an unreacted isocyanate (NCO) concentration of from 18 to 47 wt. %, based on the total solids weight of the aromatic isocyanate component, and (ii) a liquid polyol component including one or more curatives selected from the group of amines defined by Formulas (I) and (II).

Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith

An acid chemical mechanical polishing composition polishes silicon nitride over silicon dioxide and simultaneously inhibits damage to the silicon dioxide. The acid chemical mechanical polishing composition includes polyvinylpyrrolidone polymers, anionic functional colloidal silica abrasive particles and an amine carboxylic acid. The pH of the acid chemical mechanical polishing composition is 5 or less.

Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide

The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of (a) one or more alkoxylated diamines having a number average molecular weight (Mn) of from 1,000 to 20,000, or, preferably, from 1000-15000 and having four (poly)alkoxy ether groups each containing from 5 to 100 alkoxy repeat units; (b) from 0.01 to 2 wt. % or, preferably, from 0.1 to 1.5 wt. %, as solids, based on the total weight of the compositions, of one or more aqueous dispersions of elongated, bent or nodular colloidal silica particles, preferably, having a secondary particle size as determined by dynamic light scattering (DLS) of from 20 to 60 nm; and (c) ammonia or an amine base, wherein the compositions have a pH ranging from 9 to 11. The compositions are substantially free of metals, such as alkali or alkaline earth metals that can damage substrates in polishing.

Aqueous compositions of low dishing silica particles for polysilicon polishing

Acid chemical mechanical polishing compositions and methods have enhanced defect inhibition and selectively polish silicon nitride over silicon dioxide in an acid environment. The acid chemical mechanic polishing compositions include poly(2-ethyl-2-oxazoline) polymers, anionic functional colloidal silica particles, amine carboxylic acids and have a pH of 5 or less.

Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment

Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate of amorphous silicon while maintaining tunable oxide to silicon nitride removal rate ratios. The chemical mechanical polishing compositions can be used in front-end-of line semiconductor processing.

Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon

The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a Cto Calkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.

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Newark, DE, United States of America

Kwadwo E Tettey