Taiwan Semiconductor Manufacturing Comp. Ltd.

Kvei-Feng Yen

Fang-Tsun Chu

Yao-Bin Wang

Wei Yu Ma

Wei-Yu Ma

Ming-Hsin Yu

A method includes forming a transistor at a surface of a semiconductor substrate, wherein the step of forming the transistor comprises forming a gate electrode, and forming a source/drain region adjacent the gate electrode. First metal features are formed to include at least portions at a same level as the gate electrode. Second metal features are formed simultaneously, and are over and contacting the first metal features. A first one of the second metal features is removed and replaced with a third metal feature, wherein a second one of the second metal features is not removed. A fourth metal feature is formed directly over and contacting the gate electrode, wherein the third and the fourth metal features are formed using a same metal-filling process.

Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics

A circuit structure includes a first isolation region, and a first dummy gate electrode over and vertically overlapping the first isolation region. First pickup regions of a diode are formed on opposite sides of the first isolation region, wherein sidewalls of the first pickup regions contact opposite sidewalls of the first isolation region. Second pickup regions of the diode are formed on opposite sides of a combined region of the first pickup regions and the first isolation region, wherein the first and the second pickup regions are of opposite conductive types. A well region is under the first and the second pickup regions and the first isolation region, wherein the well region is of a same conductivity type as the second pickup regions.

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Hsinchu, Taiwan

Kvei-Feng Yen