Marvell Asia Pte., Ltd.

Globalfoundries Inc.

Kushal Kamal

Sreekanth G Pai

Igor Arsovski

Balaji Upputuri

A method of scan-chain testing of an integrated circuit device having a plurality of respective scan-chain paths, at least some of the respective scan-chain paths being designated as having resource constraints, includes propagating a respective scan-chain data pattern through each of the respective scan-chain paths, and gating each respective scan-chain path designated as having resource constraints, to reduce a rate of scan-chain data propagation through the respective scan-chain path, without gating any scan-chain path not designated as having resource constraints. Scan-chain paths may be designated as having resource constraints because of high power consumption or data congestion.

Power-sensitive scan-chain testing

An integrated circuit device includes a plurality of cells or modules. Each respective one of the cells or modules consumes leakage power, and the amount of leakage power consumed by a respective one of the cells or modules varies depending on states of its inputs. Scan-chain circuitry is configured to propagate through the integrated circuit device, on entry of the integrated circuit device to a low-power mode, a scan-chain pattern created in advance, to apply, to each respective cell or module in the low-power mode, a set of inputs that results in a respective low-power state with reduced leakage power. Creating the scan chain pattern includes identifying respective ones of the cells or modules as having the highest leakage power consumption, and a respective combination of inputs to place each of those the cells or modules in a respective low-power state.

Reducing leakage power in low-power mode of an integrated circuit device

A semiconductor device is disclosed that includes, among other things, a computing device including a plurality of transistors, an activity monitor to determine an activity metric associated with the plurality of transistors, and a power controller to, responsive to the activity metric indicating a first activity level, set a power supply voltage for the plurality of transistors to a first value, and responsive to the activity metric indicating a second activity level less than the first activity level, set the power supply voltage to a second value greater than the first value and apply a first reverse back bias voltage to the plurality of transistors to increase a threshold voltage of the plurality of transistors.

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Bengaluru, India

Kushal Kamal