Transphorm Inc.

Kurt Vernon Smith

Likun Shen

David Michael Rhodes

Ronald Avrom Barr

James Leroy McKay

Techniques for improving reliability of III-N devices include holding the III-N devices at a first temperature less than or equal to 30&#xb0; for a first period of time while applying a first gate-source voltage lower than a threshold voltage of the III-N devices and a first drain-source voltage greater than 0.2 times a break down voltage of the III-N devices; and holding the III-N devices at a second temperature greater than the first temperature for a second period of time while applying a second gate-source voltage lower than a threshold voltage of the III-N devices and a second drain-source voltage greater than 0.2 times a breakdown voltage of the III-N devices. After holding the III-N devices at the first and second temperatures, screening the III-N devices based on electrical performance of one or more parameters of the III-N devices.

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Santa Barbara, CA, United States of America

Kurt Vernon Smith