Nxp USA, Inc.

Freescale Semiconductor,inc.

Kurt U Neugebauer

Patrice M Parris

Weize Chen

Hubert Martin Bode

Andreas Laudenbach

Richard J DeSouza

Philippe Lance

Erwan Hemon

Andreas Johann Roth

A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.

Semiconductor device with non-isolated power transistor with integrated diode protection

Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.

Stacked protection devices with overshoot protection and related fabrication methods

A chip damage detection device is provided that includes at least one bi-stable circuit having a first conductive line passing through an observed area of a semiconductor integrated circuit chip for damage monitoring of the observed area. The at least one bi-stable circuit is arranged to flip from a first stable state into a second stable state when a potential difference between a first end and a second end of the first conductive line changes or when a leakage current overdrives a state keeping current at the first conductive line. Further, a semiconductor integrated circuit device that includes the chip damage detection device and a safety critical system that includes the semiconductor integrated circuit device or the chip damage detection circuit is provided.

Chip damage detection device for a semiconductor integrated circuit

An integrated protection circuit for protecting a main circuit from spurious high amplitude voltage signals is provided, wherein the main circuit has a main circuit input terminal connected to an input line, and the protection circuit comprises a transistor, a resistor and a capacitor. The transistor has a first electrode connected to the input line, a second electrode connected to a common reference, and a control electrode connected to the resistor. The resistor is connected to the common reference; and the capacitor is implemented as a fringe capacitor between the input line and the control electrode or a conductive line connected to the control electrode.

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Vaterstetten, Germany

Kurt U Neugebauer