Massachusetts Institute of Technology

Kurt Rauschenbach

William D Goodhue

Christine A Wang

An improved two-dimensional semiconductor surface-emitting laser array is described in which two intra-cavity internal reflecting surfaces are formed at a 45.degree. angle to the plane of the active layer of the semiconductor laser so as to internally reflect light from each end of the active layer in a direction normal to the plane of the active layer with a buried reflective mirror provided in the path of one of said reflections, so as to transmit reflected light back through the laser and out the top surface of the array.

Growing community of inventors

Marlboro, MA, United States of America

Kurt Rauschenbach