USA As Represented by Secretary of the Navy

Kurt P Scharnhorst

Inna G Talmy

Richard F Greene

Leonard J Schwee

Curtis A Martin

Albert D Krall

Richard W Brown

Harold R Riedl

Richard F Bis

Guillermo C Gaunaurd

Henry R Irons

Herbert M Berall

Bland B Houston, Jr

Wallace F Anderson

Jack R Dixon

There is disclosed herein an invention for beneficiation of powered material having superconducting characteristics and processes for carrying it out. The invention involves introducing powdered superconducting material into the vertical field of a magnet wherein particles thereof are levitated according to the Meissner Effect. Particles which are more superconducting levitate at higher elevations or states above the magnet than do particles containing phases that are non-superconducting. Particles that are non-superconducting do not react at all in the magnetic field. Levitated particles are selectively harvested from whatever states desired.

Method for the selecting superconducting powders

The shear absorption of a viscoelastic material is determined by directing acoustical energy at the viscoelastic material and sampling the backscattered signals that result when compressional waves propagate through the material and are scattered by either a fluid-filled or evacuated cavity contained therein. The backscattered signals are converted to a resonance amplitude versus frequency domain and the shear absorption of the viscoelastic material is determined from the frequency and the half-width of the resonance peaks.

Method to determine the shear absorption of a rubberlike material

An amorphous film (44) of a photoresponsive semi-conducting material such germanium-telluride deposited upon a thick silicon dioxide layer (40) formed on a silicon chip substrate (38). The silicon chip (38) underlying the central region of the amorphous film (44) is etched through to the silicon dioxide layer (40) to define a trough (48) thermally isolating the central region of the silicon dioxide layer (40).

Room temperature two color infrared detector

A detector for non-destructive sensing of binary information at a selected location along a domain wall of a thin magnetic film strip. Voltages are applied across a set of contacts arranged along the margin of the strip and the value of the voltage measured at an arranged, centered contact indicates the presence or absence of a Bloch line-crosstie pair at that location.

Magnetoresistance detector for crosstie memories

A junction photodetector employing Pb.sub.1-x Sn.sub.x Te in narrow film strips grown epitaxially on an appropriate substrate. An appropriate metal overlaps the film to form a metal-semiconductor contact.

Vacuum deposition method for fabricating an epitaxial PbSnTe rectifying

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Columbia, MD, United States of America

Kurt P Scharnhorst