American Telephone & Telegraph Co., At&t Bell Laboratories

Bell Telephone Laboratories

Kurt Nassau

Malcolm Ellis Lines

Alastair M Glass

Roland A Levy

Anne E Miller

Kenneth B Lyons

Raman-active optical fiber having very large Raman cross section is disclosed. The fiber comprises glass that has two major components, a glass-forming first component (GeO.sub.2, SiO.sub.2, AsO.sub.1.5, or combinations thereof) and a heavy metal oxide second component (PbO, BiO.sub.1.5, SbO.sub.1.5, TlO.sub.0.5, or combinations thereof), with the first and second major components making up at least 70 mol %, preferably at least 90 mol %, of the glass. The maximum relative Raman cross section .sigma..sub.r of the inventive glass is at least 15, preferably greater than 20, where .sigma..sub.r =.sigma..sub.RA /.theta..sub.SiO.sbsb.2, and where .sigma..sub.RA and .sigma..sub.SiO.sbsb.2 are the maximum 0.degree. K. Raman cross sections of the inventive glass and of pure vitreous SiO.sub.2, respectively. Fiber according to the invention can advantageously be used in apparatus such as optical fiber communications systems, information processing systems that contain an optical fiber memory loop, and optical fiber sensors.

Apparatus comprising Raman-active optical fiber

A glass reflow step to round off sharp edges of contact vias is typically included in processes for making integrated-circuit devices. In the course of making such devices with closely spaced vias, it has been found that unacceptable overhangs occur on the sidewalls of the vias. Neither changes in the composition of the glass nor modifications in the processing parameters of reflow were effective to avoid the overhang phenomenon. In accordance with the invention, it has been discovered that the overhang problem can be consistently avoided if the ratio of glass thickness to via-to-via spacing is about .ltoreq.0.393.

Contact vias in semiconductor devices

Amorphous niobates and tantalates of the alkali metals lithium, potassium, and sodium which may be off-stoichiometric with regard to the related octahedrally coordinated crystalline compositions manifest high values of dielectric constant and ionic conductivity. Electrode bearing devices may be utilized, inter alia, as capacitors, electrolytic cells, and bolometers.

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Bernardsville, NJ, United States of America

Kurt Nassau