Fsi International, Inc.

Optomec, Inc.

Tel Fsi, Inc.

Kurt Karl Christenson

Steven L Nelson

Thomas J Wagener

John David Hamre

Ronald J Hanestad

Patricia Ann Ruether

Chad Conroy

Michael J Renn

James Q Feng

Brent D Schwab

Jason A Paulsen

Christina Ann Rathman

Gary William Michalko

Philip G Clark

David Dekraker

John S Wright

James R Oikari

Biao Wu

Neil Bruce Rosengren

Jeff F Olson

Nam Pyo Lee

An apparatus and method for depositing an aerosol that has an ultrafast pneumatic, shutter. The flow of aerosol through the entire deposition flow path is surrounded by at least one sheath gas, thereby greatly increasing reliability. The distance between the aerosol switching chamber and a reverse gas flow chamber input is minimized to reduce switching time. The distance from the switching chamber to the nozzle exit is also minimized to reduce switching time. The gas flows in the system are configured to maintain a substantially constant pressure in the system, and consequently substantially constant flow rates through the deposition nozzle and exhaust nozzle, to minimize on/off switching times. This enables the system to have a switching time of less than 10 ms.

High reliability sheathed transport path for aerosol jet devices

Methods and apparatuses for controlling aerosol streams being deposited onto a substrate via pneumatic shuttering. The aerosol stream is surrounded and focused by an annular co-flowing sheath gas in the print head of the apparatus. A boost gas flows to a vacuum pump during printing of the aerosol. A valve adds the boost gas to the sheath gas at the appropriate time, and a portion of the two gases is deflected in a direction opposite to the aerosol flow direction to at least partially prevent the aerosol from passing through the deposition nozzle. Some or all of the aerosol is combined with that portion of the boost gas and sheath gas and is exhausted from the print head. By precisely balancing the flows into and out of the print head, maintaining the flow rates of the aerosol and sheath gas approximately constant, and keeping the boost gas flowing during both printing and shuttering, the transition time between printing and partial or full shuttering of the aerosol stream is minimized. The pneumatic shuttering can be combined with a mechanical shutter for faster operation. A pre-sheath gas can be used to minimize the delay between the flow of gas in the center and the flow of gas near the sides of the print head flow channel.

Shuttering of aerosol streams

A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90&#xb0; C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90&#xb0; C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.

Process for removing material from substrates

Apparatus for removing material from one or more substrates

A system for processing one or more substrates according to the present invention includes a diversion valve that can deliver two or more process fluids to a dispensing device through a common line/pipe. The present invention also includes related methods.

Substrate processing systems and related methods

A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; 

Process for treatment of semiconductor wafer using water vapor containing environment

A method for electroless plating of a substrate is provided that comprises exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material to form an activated electroless plating reagent prior to application of the electroless plating reagent to the substrate. The activated electroless plating reagent is applied to a substrate in the process chamber under conditions to cause the metal of the electroless plating reagent to deposit on the substrate. Systems and modules are also described.

Reagent activator for electroless plating

The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i.e., by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.

Use of silyating agents

Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Rinsing processes and equipment

A method is provided for treating an object. In this method, a treating chemical is introduced to a bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid, followed by introducing non-treating liquid into the bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid. An apparatus for carrying out this method is also provided. This method is particularly beneficial for objects used in precision manufacturing by treatment with solutions, such as semiconductor wafers or similar substrates.

Transition flow treatment process and apparatus

An immersion processing system is provided for cleaning wafers with an increased efficiency of chemical use. Such a system advantageously uses less cleaning enhancement substance that may be provided as gas, vapor or liquid directly to a meniscus or wafer/liquid/gas bath interface so as to effectively modify surface tensions at the meniscus with minimized chemical usage. Such a delivery system design may be applied for single wafer processing or for processing multiple wafers together within a single liquid bath vessel. For single wafer processing, in particular, cleaning enhancement substance can be delivered along one or both major sides of the wafer, preferably at the meniscus that is formed as the wafer and liquid are relatively moved, while a processing vessel usable for such single wafer processing may itself be designed with a minimized size to accommodate a single wafer. By reducing the vessel volume, chemical usage for any processing chemicals that are to be provided within a liquid bath may also be advantageously reduced.

Semiconductor wafer cleaning systems and methods

A process for etching high dielectric constant (high-k) films (e.g., Zr Si O , Hf Si O , Zr Hf O , Hf Al O , and Zr Al O ) more rapidly than coexisting SiO , polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH OH).

Growing community of inventors

Minnetonka, MN, United States of America

Kurt Karl Christenson