Motorola Corporation

Kurt K Sakamoto

Peter J Zdebel

Christopher K Chun

Robert A Pryor

Neil T Tracht

Michael G Lincoln

A high frequency bipolar transistor (30, 60) having reduced capacitance and inductance is formed over a substrate (61). The substrate (61) is heavily doped to form a low resistance current path. A lightly doped epitaxial layer (62) isolates the substrate (61) from layers which form the transistor. The epitaxial layer (62) is the same conductivity type as the substrate (61). A topside substrate contact (73) couples an emitter of the transistor (60) to the substrate (61). The backside of the substrate (61) is metalized and conductively attached to a leaded flag of a leadframe (51) thereby eliminating wirebond inductance in the emitter of the transistor.

High frequency bipolar transistor and method of forming the same

A process combines a high performance silicon pin diode (60) and other semiconductor devices such as transistors, resistors, and capacitors. The pin diode (60) is formed beneath an epitaxial layer (44) of the device at a depth that maximizes absorption of light having a wavelength greater than approximately 600 nanometers. Devices such as transistors are formed in the epitaxial layer (44). An integrated circuit has a substrate (41), an intrinsically doped layer (42), a buried layer (43), and an epitaxial layer (44). An isolation region (45) isolates an intrinsically doped region (46), a buried layer region (47), and the epitaxial layer region (48). The pin diode (32) has a substrate (41), an intrinsically doped region (46), and a buried layer region (47). A polysilicon region (62) provides a top side contact for the pin diode (60).

Optically sensitive device and method

A capacitor (58) for an integrated circuit having a conductive trench (50), disposed below a bottom electrode layer (52), that electrically connects the bottom electrode layer to a semiconductor substrate (14, 16). The conductive trench eliminates the need for a top-side contact to the bottom electrode layer. The semiconductor substrate is, for example, connected to ground.

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Chandler, AZ, United States of America

Kurt K Sakamoto