Lam Researh Corporation

Kurt Hein Vergeer

Jan Matthijn Dekkers

Willem Cornelis Lambert Hopman

Kristiaan Hendrikus Aloysius Böhm

Jeroen Aaldert Heuver

Jan Arnaud Janssens

The invention relates to a method for controlling stress in a substrate during laser deposition. The method includes the steps of: providing a laser deposition device including a chamber with a target holder with a target, a substrate holder with a substrate facing the target and a window, the laser deposition device further including a laser beam directed through the window of the chamber onto a spot at the target for generating a plasma plume of target material and depositing the target material onto a surface portion of the substrate in order to form a thin film of target material, wherein the target spot is movable relative to the substrate in order to deposit target material onto a plurality of surface portions of the substrate; defining a plurality of discrete surface portions on the substrate; aligning the target spot one after the other with each of the plurality of discrete surface portions and generating a plasma plume to deposit target material on each of the plurality of discrete surface portions; and adjusting at least one of the parameters of the deposition process depending on the discrete surface portion with which the target spot is aligned, which parameters include temperature, pressure, laser beam pulse duration, laser beam power, distance of target to substrate.

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Waalre, Netherlands

Kurt Hein Vergeer