Agere Systems Inc.

Lucent Technologies Inc.

Triquint Semiconductor Corporation

Qorvo Us, Inc.

Agere Systems Guardian Corp.

At+t Corp.

At&t Bell Laboratories

Kurt George Steiner

Alan Sangone Chen

Susan Clay Vitkavage

Sailesh Mansinh Merchant

Taeho Kook

Benjamin P Abbott

Edward Belden Harris

Daniel Patrick Chesire

Gerald W Gibson, Jr

Scott Jessen

Seung Hyuk Kang

John William Osenbach

Robert Aigner

Mark Adam Bachman

Steven Alan Lytle

Cheryl Anne Bollinger

Julien Gratier

Suzanne Combe

Timothy Daniel

Jean Briot

Eduardo Jose Quinones

Curtiss Hella

Tungsheng Yang

Chad Thompson

Michael C Ayukawa

Yi Ma

Sailesh Chittipeddi

Simon John Molloy

Yuan Chen

Kuo-Hua Lee

Marc Solal

Brittin C Kane

Nace Layadi

Alvaro Maury

Avinoam Kornblit

Chen-Hua D Yu

Gerald Warren Gibson, Jr

George Grama

Sylvia Thomas

Ian Y Yee

Natalya F Naumenko

Charles E Carpenter

Chong-Cheng Fu

Min-Liang Chen

Joze E Antol

Subramanian Karthikeyan

David P Favreau

Vance D Archer, Iii

Daniel J Vitkavage

Deepak A Ramappa

James W Blatchford, Jr

Huili Shao

Robert Y S Huang

Isaiah O Oladeji

Joseph Ashley Taylor

Daniele Gilkes

Kevin J Gamble

Donald C Dennis

Stephen A Neston

Chung-Ting Liu

Wan Yee Cheung

Feng Li

Joshua Jia Li

Robert Wayne Bradshaw

Steve Lytle

Gary Dabbaugh

Troy A Giniecki

Catherine Ann Fieber

Scott Shive

Roland P Krebs

Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is between the piezoelectric layer and the dielectric layer. The capacitor includes a first plate on the surface of the piezoelectric layer such that the first plate is between the piezoelectric layer and the dielectric layer and a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer.

Acoustic filtering circuitry including capacitor

An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.

Guided acoustic wave device

Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (K&#x3a9;&#xb7;m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.

Surface acoustic wave filter with a cap layer for improved reliability

Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.

Methods, systems, and apparatuses for temperature compensated surface acoustic wave device

Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer.

Acoustic wave device

Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

High coupling, low loss saw filter and associated method

The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM.

Routing under bond pad for the replacement of an interconnect layer

An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.

Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities

According to certain embodiments, integrated circuits are fabricated using brittle low-k dielectric material to reduce undesired capacitances between conductive structures. To avoid permanent damage to such dielectric material, bond pads are fabricated with support structures that shield the dielectric material from destructive forces during wire bonding. In one implementation, the support structure includes a passivation structure between the bond pad and the topmost metallization layer. In another implementation, the support structure includes metal features between the topmost metallization layer and the next-topmost metallization layer. In both cases, the region of the next-topmost metallization layer under the bond pad can have multiple metal lines corresponding to different signal routing paths. As such, restrictions on the use of the next-topmost metallization layer for routing purposes are reduced compared to prior-art bond-pad support structures that require the region of the next-topmost metallization layer under the bond pad to be a single metal structure.

Bond pad support structure for semiconductor device

Provided is a method for separating a semiconductor wafer into individual semiconductor dies. The method for separating the semiconductor wafer, among other steps, may include implanting an impurity into regions of a semiconductor wafer proximate junctions where semiconductor dies join one another, the impurity configured to disrupt bonds in the semiconductor wafer proximate the junctions and lead to weakened regions. The method for separating the semiconductor wafer may further include separating the semiconductor wafer having the impurity into individual semiconductor dies along the weakened regions.

Method for separating a semiconductor wafer into individual semiconductor dies using an implanted impurity

A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.

Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor

An inductor formed within an integrated circuit and a method for forming the inductor. The inductor comprises an underlying layer of aluminum formed in a first metallization layer and patterned and etched into the desired shape. In one embodiment the aluminum line comprises a spiral shape. According to a damascene process, a conductive runner, preferably of copper, is formed in a dielectric layer overlying the aluminum line and in electrical contact therewith. The aluminum line and the conductive runner cooperate to form the inductor. In another embodiment the aluminum line and the conductive runner are formed in a vertically spaced-apart orientation, with tungsten plugs or conductive vias formed to provide electrical connection therebetween. A method for forming the inductor comprises forming an aluminum conductive line and forming a conductive runner over the conductive line.

Inductor formed in an integrated circuit

An integrated circuit device structure and a process for fabricating the structure wherein the power bus interconnect structure is formed in the aluminum pad or contact layer. An interconnect structure for interconnecting underlying levels of interconnect can also be formed in the aluminum pad layer.

Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures

A protruding spacer that protrudes above the top surface of a gate electrode structure provides enhanced resistance to exposure of the gate electrode during the etch process used to form self-aligned contacts. The protruding spacer may be formed using an amorphous carbon sacrificial layer as the top layer of the patterned gate electrode structure. Dielectric spacers are formed alongside the gate electrode structure, including alongside the sacrificial amorphous carbon layer. The dielectric spacers extend substantially to the top of the amorphous carbon layer. The amorphous carbon layer is then removed such that the remaining gate structure includes dielectric spacers that have a protruding section that protrudes above the top surface of the remaining gate structure. A nitride layer may be formed over the gate structure. Such a structure prevents exposure of the gate electrode during the formation of self-aligned contacts, and shorting, once the contact openings are filled.

Protruding spacers for self-aligned contacts

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Orlando, FL, United States of America

Kurt George Steiner