Integrated Device Technology, Inc.

Apple Inc.

Maxim Integrated Products, Inc.

Aptos Corporation

Kuolung Lei

Jerome Chandra Bhat

Arvin Emadi

Harmeet Bhugra

Richard Yeh

Craig A Easson

Krishna Prasad Vummidi Murali

Yun X Ma

Judy Hermann

Ye Wang

Tsing-Chow Wang

Wanling Pan

Chang-Ming Lin

Te-Sung Wu

Tony Shen

Minfan Pai

Chi Shen Ho

Min Chih Hsuan

Susana Samoranos

A waterproofed environmental sensing device with water detection provisions includes an environmental sensor to sense one or more environmental properties. The device further includes an electronic integrated circuit implemented on a substrate and coupled to the environmental sensor via a wire bonding. An air-permeable cap structure is formed over the environmental sensor, and a protective layer is formed over the wire bonding to protect the wire bonding against damage.

Water proofing and water detection schemes for MEMS-based environmental sensing devices

The present disclosure is directed to a sensor package having a thermopile sensor and a reference (or dark channel) thermopile sensor disposed therein for temperature measurements. In one or more implementations, the sensor package includes a substrate, a thermopile sensor disposed over the substrate, a reference thermopile sensor disposed over the substrate, a reference temperature sensor disposed over the substrate surface, a lid assembly disposed over the thermopile sensor and the reference thermopile sensor, and a thermo-optical shield. The thermo-optical shield defines an aperture over the thermopile sensor such that at least a portion of the thermo-optical shield is positioned over the reference thermopile sensor to provide optical and thermal shielding for portions of the sensor package.

Non-contact temperature measurement sensor

Methods of forming packaged microelectromechanical resonators include forming a first isolation trench in a first surface of a capping substrate, with the first isolation trench encircling a first portion of the capping substrate. The first isolation trench is filled with an electrically insulating material. The first surface of the capping substrate is bonded to a device substrate, which includes the microelectromechanical resonator and at least a first electrically conductive line connected to the microelectromechanical resonator. A second surface of the capping substrate is planarized for a sufficient duration to thereby expose the electrically insulating material and the first portion of the capping substrate encircled by the first isolation trench. The exposed first portion of the capping substrate is selectively etched to thereby define a through-substrate opening therein, which exposes a first portion of the first electrically conductive line. At least a portion of the through-substrate opening is filled with an electrically conductive through-substrate via, which is electrically connected to the first portion of the first electrically conductive line.

Methods of packaging microelectromechanical resonators

Methods of forming packaged micro-electromechanical devices include forming a first substrate having a micro-electromechanical device therein, which extends adjacent a first surface of the first substrate. A first surface of a second substrate is then bonded to the first surface of the first substrate, to thereby encapsulate the micro-electromechanical device within a space provided between the first and second substrates. Subsequent to bonding, a second surface of the second substrate is selectively etched to define at least one through-substrate opening therein, which exposes an electrode of the micro-electromechanical device. Thereafter, the through-substrate opening is filled with an electrically conductive through-substrate via.

Methods of forming packaged micro-electromechanical devices

Methods of forming multi-chip semiconductor substrates include forming a first plurality of dicing streets in a first surface of a first semiconductor wafer having a first plurality of bonding sites thereon and forming a second plurality of dicing streets in a first surface of a second semiconductor wafer having a second plurality of bonding sites thereon. The first surfaces of the first and second semiconductor wafers are bonded together so that the first plurality of dicing streets are aligned with the second plurality of dicing streets and the first plurality of bonding sites are matingly received and permanently affixed within the second plurality of bonding sites. A plurality of bonded pairs of semiconductor chips are then formed by planarizing the second surface of the second semiconductor wafer until the second plurality of dicing streets are exposed.

Methods of forming multi-chip semiconductor substrates

Methods of forming a substrate for microelectronic packaging may include electroplating a metal seed layer onto a sidewall of a trench extending through the substrate. The sidewall may be patterned to have at least one slot therein that extends through the substrate. This slot is formed to be sufficiently narrow to block plating of the metal seed layer onto sidewalls of the slot. Thereafter, the at least a pair of electrodes are selectively electroplated onto side-by-side portions of the metal seed layer on the sidewall of the trench. During this electroplating step, the slot is used to provide a self-aligned separation between the pair of electrodes.

Methods of forming microelectronic packaging substrates having through-substrate vias therein

A semiconductor package including a flexible multichip module having multiple chips on flexible appendages with the flexible appendages folded so that the semiconductor chips are arranged in aligned and stacked positions.

Flexible multi-chip module and method of making the same

A method of making an electrical contact bump electrical contact structure on a substrate comprising: providing a substrate having a bond pad, and a passivation layer overlying a portion for the substrate and wherein the passivation layer includes an opening therein exposing a portion of the bond pad, and wherein the passivation layer has a raised portion overlying the bond pad; forming an under bump metallurgy over at least the exposed portion of the bond pad and over at least a portion of the raised portion of the passivation layer overlying the bond pad; forming a sacrificial blanket having an opening therein that in cross-section has an inverted T-shape over the substrate so that the opening in the sacrificial blanket is aligned with the bond pad; and depositing an electrically conductive material into the opening in the sacrificial blanket.

Growing community of inventors

San Jose, CA, United States of America

Kuolung Lei