Western Digital Technologies, Inc.

Hitachi Global Storage Technologies Netherlands B.v.

International Business Machines Corporation

Western Digital (fremont), Inc.

Hgst Netherlands, B.v.

Other

Kuok San Ho

Quang Le

Xiaoyong Liu

Ching Hwa Tsang

Cherngye Hwang

Brian Rodrick York

Zhanjie Li

Hisashi Takano

Suping Song

Zhigang Bai

Robert Fontana

Daniele Mauri

Mustafa Pinarbasi

James Mac Freitag

Rajeev Nagabhirava

Yunfei Ding

Tao Pan

Hardayal Singh Gill

Jeffrey Childress

Petrus Antonius Van Der Heijden

Meng Ding

Michael Gribelyuk

John Thomas Contreras

Joey Martin Poss

Thao Anh Nguyen

Ian Robson McFadyen

Randy G Simmons

Tsann Lin

Yimin Hsu

Yaguang Wei

Scott Arthur MacDonald

Huey-Ming Tzeng

Marie-Claire Cyrille

Susumu Okamura

Son T Le

Xiaoyu Xu

Gonçalo Marcos Baião De Albuquerque

Zheng Gao

Lijie Guan

Ming Mao

Wipul Jayasekara

Alexander Goncharov

Frederick Hayes Dill

Goran Mihajlovic

James Lamar Nix

Daniel Bai

Rohan Babu Nagabhirava

Kim Yang Lee

Edward Hin Pong Lee

Jordan Asher Katine

Ernesto Esteban Marinero

Changqing Shi

Elizabeth Ann Dobisz

Terence T Lam

Savas Gider

Youfeng Zheng

Jih-Shiuan Luo

Tsung Yuan Chen

Hongquan Jiang

Venkatesh Chembrolu

Prakash Kasiraj

Supradeep Narayana

Jian-Gang Zhu

Nam Hai Pham

Changhe Shang

Kashmira J Carey

Huy H Ho

Son Van Nguyen

Kochan Ju

Vladimir Nikitin

Jeffrey Scott Lille

David John Seagle

Wen-Chien David Hsiao

Shaoping Li

Neil Leslie Robertson

Stefan Maat

Matthew Joseph Carey

Feng Q Liu

Masafumi Mochizuki

Gerardo Bertero

Sining Mao

Jui-lung Li

Alexander Michael Zeltser

Ying Hong

Jyh-Shuey Jerry Lo

Jinshan Li

Roger William Wood

Patrick Rush Webb

Chih-Ching Hu

David Eugene Heim

Yongchul Ahn

Anup Roy

Terence Tin-Lok Lam

Goncalo Baiao De Albuquerque

Andrew Chen

Pham Nam Hai

Khang H D Nguyen

Julian Sasaki

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

Spin orbit torque based thermal sensor for insitu monitoring of magnetic recording head

The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.

Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devices

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S), a free layer (FL) disposed over the BiSb layer, and a second shield (S) disposed over the FL. The S, the FL, and the Sare disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the Sto the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the Sto the S

SOT reader with recessed SOT topological insulator material

Computing devices, such as mobile computing devices, have access to one or more image sensors that can capture images and video with multiple subjects. Some of these subjects may vary in priority for various tasks. It may be desired to increase or decrease the compression on each subject in order to more efficiently store the image data. Low-power, fast-response machine learning logic can be configured to allow for the generation of a plurality of inference data. Inference data can be associated with the type, motion and/or priority of the subjects as desired. This inference data can be utilized along with other subject data to generate one or more variable compression regions within the image data. The image data can be subsequently processed to compress different areas of the image based on a desired application. The variably compressed image can reduce file sizes and allow for more efficient storage and processing.

Low-power fast-response machine learning variable image compression

The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

Highly textured 001 BiSb and materials for making same

The present disclosure generally relates to a two dimensional magnetic recording (TDMR) spin-orbit torque (SOT) read head comprising bismuth antimony (BiSb) layers. The read head comprises a lower reader comprising a first SOT stack and an upper reader comprising a second SOT stack. The first SOT stack and the second SOT stack each individually comprise a BiSb layer recessed from a media facing surface (MFS) and a free layer exposed at the MFS. The BiSb layers of each SOT stack are recessed from the MFS a distance of about 5 nm to about 20 nm, the distance being less than a length of the free layers. In one embodiment, the lower reader and the upper reader share a current path. In another embodiment, the lower reader and the upper reader have separate current paths.

TDMR SOT read heads having recessed topological insulator materials

The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a () orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the () orientation. The BiSbE layer may be formed on a texturing layer to ensure the () orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the () orientation of the doped BiSbE layer.

Doping process to refine grain size for smoother BiSb film surface

The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.

Topological insulator based spin torque oscillator reader

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GeNiFe layers, where at least one GeNiFe layer is disposed in contact with the BiSb layer. The GeNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GeNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GeNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GeNiFe layer allows the crystal orientation of the BiSb layer to be selected.

Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.

Cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices

The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices

Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.

Optical devices for tilt in camera systems

The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.

SOT reader using BiSb topological insulator

The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device comprising a first seed layer, a first spin hall effect (SHE) layer, a first interlayer, a first free layer, a gap layer, a second seed layer, a second SHE layer, a second free layer, and a second interlayer. The gap layer is disposed between the first SHE layer and the second SHE layer. The materials and dimensions used for the first and second seed layers, the first and second interlayers, and the first and second SHE layers affect the resulting spin hall voltage converted from spin current injected from the first free layer and the second free layer, as well as the ability to tune the first and second SHE layers. Moreover, the SOT differential reader improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

SOT film stack for differential reader

Growing community of inventors

Santa Clara, CA, United States of America

Kuok San Ho