Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuo-Yuan Ho

Yi-Hsiung Lin

Ming-Te Chen

Jung-Wei Lee

Li-Jen Chen

Chih-Cheng Kao

Shih-Ting Zeng

Embodiments of method for cooling a wafer in an ion implantation process are provided. A method for cooling the wafer in the ion implantation process includes placing the wafer in a process module. The method also includes performing the ion implantation process on the wafer and simultaneously cooling the wafer in the process module. The method further includes removing the wafer from the process module. In addition, the method includes heating up the wafer.

Method and apparatus for cooling wafer in ion implantation process

Systems and methods are provided for ion implantation. For example, ion implantation is performed using a first ion implant tool. At least one condition parameter associated with the first ion implant tool is dynamically obtained. Whether the first ion implant tool is in a first condition is determined based on the at least one condition parameter. Ion implantation is performed using a second ion implant tool based on the determination.

Systems and methods for intelligent dispatching for wafer processing

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Hsinchu, Taiwan

Kuo-Yuan Ho