Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuo-Yi Chao

Mei-Yun Wang

Chao-Hsun Wang

Chen-Yuan Kao

Feng-Yu Chang

Yuan-Ching Peng

Jiun-Ming Kuo

Po-Yu Huang

Shih-Che Lin

Rueijer Lin

Wang-Jung Hsueh

Fu-Kai Yang

Yu-Feng Yin

Shih-Chieh Wu

Pang-Chi Wu

Bao-Ru Young

Ping-Wei Wang

Tung-Heng Hsieh

Chen-Ming Lee

Yu-Kuan Lin

Chang-Ta Yang

Chih-Chung Chang

You-Ting Lin

Hsien-Huang Liao

Jen-Hong Chang

Chung-Ting Ko

Sung-En Lin

Chia-Cheng Chao

Yi-Hsiu Liu

Wen-Hsing Hsieh

Wei-Jung Lin

Kuo-Ju Chen

Pei-Yu Chou

Yu-Shan Lu

Chung-I Yang

Pang-Sheng Chang

Chun-Wei Hsu

Li-Chieh Wu

Chih-Ching Wang

Yen-Po Lin

Jia-En Lee

Chung-Huai Chang

Ru-Gun Liu

Wei-Yang Lee

Jyu-Horng Shieh

Sheng-Liang Pan

Yuan-Tien Tu

Shu-Huei Suen

Shao-Jyun Wu

Chia-Yang Hung

Yi-Chun Chang

Shu-Wen Shen

Chen-Hsuan Liao

Jack Kuo-Ping Kuo

Szu-Wei Tseng

Chia-Sheng Chang

In an embodiment, a method includes: forming a first fin extending from a substrate; forming a second fin extending from the substrate, the second fin being spaced apart from the first fin by a first distance; forming a metal gate stack over the first fin and the second fin; depositing a first inter-layer dielectric over the metal gate stack; and forming a gate contact extending through the first inter-layer dielectric to physically contact the metal gate stack, the gate contact being laterally disposed between the first fin and the second fin, the gate contact being spaced apart from the first fin by a second distance, where the second distance is less than a second predetermined threshold when the first distance is greater than or equal to a first predetermined threshold.

Semiconductor devices

An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Compact electrical connection that can be used to form an SRAM cell and method of making the same

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal gate stack over a substrate and an epitaxial structure over the substrate. The semiconductor device structure also includes a conductive contact electrically connected to the epitaxial structure. A topmost surface of the metal gate stack is vertically disposed between a topmost surface of the conductive contact and a bottommost surface of the conductive contact. The semiconductor device structure further includes a first conductive via electrically connected to the metal gate stack. The topmost surface of the conductive contact is vertically disposed between a topmost surface of the first conductive via and a bottommost surface of the first conductive via. In addition, the semiconductor device structure includes a second conductive via electrically connected to the conductive contact.

Structure and formation method of semiconductor device with contact structures

Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.

Dielectric isolation structure for multi-gate transistors

A semiconductor structure includes a metal gate structure having a gate dielectric layer and a gate electrode. A topmost surface of the gate dielectric layer is above a topmost surface of the gate electrode. The semiconductor structure further includes a conductive layer disposed on the gate electrode of the metal gate structure, the conductive layer having a bottom portion disposed laterally between sidewalls of the gate dielectric layer and a top portion disposed above the topmost surface of the gate dielectric layer. The semiconductor structure further includes a contact feature in direct contact with the top portion of the conductive layer.

Forming metal contacts on metal gates

Vias, along with methods for fabricating vias, are disclosed that exhibit reduced capacitance and resistance. An exemplary interconnect structure includes a first source/drain contact and a second source/drain contact disposed in a dielectric layer. The first source/drain contact physically contacts a first source/drain feature and the second source/drain contact physically contacts a second source/drain feature. A first via having a first via layer configuration, a second via having a second via layer configuration, and a third via having a third via layer configuration are disposed in the dielectric layer. The first via and the second via extend into and physically contact the first source/drain contact and the second source/drain contact, respectively. A first thickness of the first via and a second thickness of the second via are the same. The third via physically contacts a gate structure, which is disposed between the first source/drain contact and the second source/drain contact.

Different via configurations for different via interface requirements

A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.

Methods of forming air spacers in semiconductor devices

A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

Dielectric fin structure

A method includes forming a semiconductor substrate, forming hard mask layers (HMs) over the semiconductor substrate, forming first mandrels over the HMs, forming second mandrels along sidewalls of the first mandrels, forming a protective layer over the first mandrels and the second mandrels, removing a portion of the protective layer to expose portions of the first and the second mandrels, removing the exposed portions of the second mandrels with respect to the exposed portions of the first mandrels, removing remaining portions of the protective layer to expose remaining portions of the first and second mandrels, where the exposed portions of the first mandrels and the remaining portions of the first and second mandrels form a mandrel structure, patterning the HMs using the mandrel structure as an etching mask, and patterning the semiconductor substrate to form a fin structure using the patterned HMs as an etching mask.

Mandrel structures and methods of fabricating the same in semiconductor devices

A method for forming a FinFET device structure is provided. The method includes forming a gate dielectric layer over a fin structure. The method also includes forming a gate electrode layer over the gate dielectric layer. The method further includes forming a first dielectric layer formed over the gate dielectric layer. In addition, the method includes forming a first conductive layer on the gate dielectric layer. A bottom surface of the first conductive layer is in direct contact a top surface of the gate electrode layer, a sidewall of the first conductive layer is in direct contact the first dielectric layer and spaced apart from the gate dielectric layer.

Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact

A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Semiconductor device and methods of forming the same

The embodiments of the disclosure provide a FinFET. The FinFET includes a substrate, a first gate stack and a second gate stack. The substrate has a first fin and a second fin. The first gate stack is across the first fin and extends along a widthwise direction of the first fin. The second gate stack is across the second fin and extends along a widthwise direction of the second fin. A bottommost surface of the first gate stack is lower than a bottommost surface of the second gate stack, and a first gate height of the first gate stack directly on the first fin is substantially equal to a second gate height of the second gate stack directly on the second fin.

FinFET device and method of forming the same

Various embodiments of the present disclosure provide a via-first process for connecting a contact to a gate electrode. In some embodiments, the contact is formed extending through a first interlayer dielectric (ILD) layer to a source/drain region bordering the gate electrode. An etch stop layer (ESL) is deposited covering the first ILD layer and the contact, and a second ILD layer is deposited covering the ESL. A first etch is performed into the first and second ILD layers and the etch stop layer to form a first opening exposing the gate electrode. Etches are performed into the second ILD layer and the etch stop layer to form a second opening overlying the contact and overlapping the first opening, such that a bottom of the second opening slants downward from the contact to the first opening. A gate-to-contact (GC) structure is formed filling the first and second openings.

Via-first process for connecting a contact and a gate electrode

A FinFET device structure is provided. The FinFET device structure includes a gate structure formed over a fin structure, and a gate spacer layer formed on a sidewall of the gate structure. The FinFET device structure includes a gate contact structure formed over the gate structure, and a first isolation layer surrounding the gate contact structure. A bottom surface of the first isolation layer is lower than a top surface of the gate spacer layer.

Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same

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Hsinchu, Taiwan

Kuo-Yi Chao