Industrial Technology Research Institute

Lextar Electronics Corporation

Kuo-Wei Huang

Yung-Liang Tung

Ching-Huai Ni

Jen-An Chen

Jia-Jhang Kuo

Shu-Wei Chen

Pei-Ting Chiu

Bo-Yu Ko

Chun-Wei Wang

Yu-Hung Chen

Jung-Pin Chiou

The present disclosure provides a radiation detector, including a substrate, a pixel array formed on the substrate, a perovskite thick film formed on the pixel array and having a cubic crystal phase, a first electrode formed on the perovskite thick film and is opposite to the pixel array, and a readout circuit. The radiation detector has significantly reduced dark current density and high sensing sensitivity. The present disclosure also provides a method for preparing the perovskite thick film.

Perovskite thick film, preparation method thereof, and radiation detector comprising the same

A light emitting diode device includes a substrate, a frame, an LED die and a transparent layer. The frame is located on the substrate. The frame and the substrate collectively define a concave portion. The frame has a light reflectivity ranging from 20% to 40%. The LED die is located on the substrate and within the concave portion. The transparent layer is filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.

Light emitting diode device

Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X].n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

Perovskite film, precursor composition thereof, method for preparing the same, and semiconductor element including the same

Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100&#xb0; C. and 200&#xb0; C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.(RNH)MAMX&#x2003;&#x2003;formula (1),

Perovskite film and manufacturing method thereof

Lead frame for light-emitting diode

Growing community of inventors

Hsinchu, Taiwan

Kuo-Wei Huang