Sino-american Silicon Products Inc.

Sino-american Sulicon Products Inc.

Kuo-Wei Chuang

Wen-Ching Hsu

I-Ching Li

Wen-Huai Yu

Yu-Min Yang

Cheng-Jui Yang

Ming-Kung Hsiao

Bo-Kai Wang

Sung Lin Hsu

Huang Wei Lin

Yuan Hsiao Chang

Sung-Lin Hsu

Hung-Sheng Chou

A polycrystalline silicon wafer is provided. The polycrystalline silicon wafer, includes a plurality of silicon grains, wherein the carbon content of the polycrystalline silicon wafer is greater than 4 ppma, and the resistivity of the polycrystalline silicon wafer is greater than or equal to 1.55 &#x3a9;-cm.

Polycrystalline silicon column and polycrystalline silicon wafer

A polycrystalline silicon column is provided. The polycrystalline silicon column includes a plurality of silicon grains grown along a crystal-growing direction. In the crystal-growing direction, the average grain size of the silicon grains and the resistivity of the polycrystalline silicon column have opposite variation in their trends, the average grain size of the silicon grains and the oxygen content of the polycrystalline silicon column have opposite variation in their trends, and the average grain size of the silicon grains and the defect area ratio of the polycrystalline silicon column have the same variation in their trends. The overall average defect area ratio of the polycrystalline silicon column is less than or equal to 2.5%.

The invention provides a crucible assembly and method of manufacturing a crystalline silicon ingot by use of such crucible assembly. The crucible assembly of the invention includes a crucible body and a fiber textile article. The fiber textile article is made of a plurality of carbon fibers, and is loaded on a bottom of the crucible body. The fiber textile article has a plurality of intrinsic pores randomly arranged.

Crucible assembly and method of manufacturing crystalline silicon ingot by use of such crucible assembly

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Hsinchu, Taiwan

Kuo-Wei Chuang