Applied Materials, Inc.

Asml Netherlands B.v.

Kuo-Shih Liu

Wei Fang

Fei Wang

Xuedong Liu

Jack Jau

Mario Dave Silvetti

Ping Xu

Rudolf H Hendel

William Nixon Taylor, Jr

Zhi Xu

Ashish V Shrotriya

Prasanth Kumar

Ernest L Cheung

Ramana Veerasingam

Gang Chen

Michael G Friebe

John Ferguson

Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Low dose charged particle metrology system

Disclosed herein is a method comprising: generating a plurality of probe spots on a sample by a plurality of beams of charged particles; while scanning the plurality of probe spots across a region on the sample, recording from the plurality of probe spots a plurality of sets of signals respectively representing interactions of the plurality of beams of charged particles and the sample; generating a plurality of images of the region respectively from the plurality of sets of signals; and generating a composite image of the region from the plurality of images.

Methods of inspecting samples with multiple beams of charged particles

Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70&#xb0; and 270&#xb0;. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.

Using phase difference of interference lithography for resolution enhancement

An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.

Reduction of plasma edge effect on plasma enhanced CVD processes

A gas feedthrough in a semiconductor processing apparatus comprises a static-dissipative composite material. This material is characterized by good resistance to electromigration and is preferably made of a homogeneous material. This apparatus for preventing the transfer of energy to a gas flown through a gas line and comprises a gas feedthrough comprising a static-dissipative material, the feedthrough having a first end for abuttingly contacting an electrically energized member and a second end for contacting a grounded member, the feedthrough defining a void therein along its length to house a gas line.

Gas feedthrough with electrostatic discharge characteristic

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Fremont, CA, United States of America

Kuo-Shih Liu