Advanced Silicon Display Optoelectronics Corporation Ltd.

Kuo-lung Huang

Rong Hsu

Yeuk-keung Fung

A preparation method of an LCoS panel provides a wafer substrate at a wafer level, the substrate including die areas with active circuits. A seal is formed on the wafer substrate, coupling to a transparent substrate. Vias extend through a thick silicon substrate and there are conductive interfaces on the second surface in each die area, the active circuit being connected to the back side of the wafer substrate by the vias and the conductive interfaces. The wafer substrate and the transparent substrate are cut to obtain LCoS panels. These processes (especially the circuit packaging) are all performed at wafer level, improving production efficiency and reducing production cost. An LCoS panel so prepared is also disclosed.

Liquid crystal on silicon panel, and preparation method thereof

An LCoS panel and a method of preparation includes wafer level packaging, manufacturing vias through a silicon substrate in each die area of a wafer substrate, and manufacturing conductive interfaces on a back surface of the wafer substrate. Each conductive interface corresponds to one via and so connected to an active circuit of the die area where the conductive interface is located. Liquid crystal packaging is applied, a seal coated to surround the pixel circuit area of the active circuit on a front surface of the wafer substrate, injecting liquid crystal into a space defined by the seal, the seal coupling glass substrate comprising a transparent conductive layer and the wafer substrate, and then cutting. Wafer level chip scale packaging of the LCoS panels is thus achieved, the cost is reduced, the obtained LCoS panels are small in total area and of greater thinness.

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Shenzhen, China

Kuo-lung Huang