Au Optronics Corporation

Lextar Electronics Corporation

Hon Hai Precision Industry Co., Ltd.

Tpk Advanced Solutions Inc.

Ye Xin Technology Consulting Co., Ltd.

Kuo-Lung Fang

Han-Tu Lin

Chih-Wei Chao

Chien-Sen Weng

Yi-Chun Kao

Hsin-Hua Lin

Po-Li Shih

Chih-Lung Lee

Hsiang-Lin Lin

Wen-Ching Tsai

Chih-Chun Yang

Jun-Rong Chen

Chih-Hung Shih

Ta-Wen Liao

Ming-Yuan Huang

Shiun-Chang Jan

Wei-Chih Chang

I-Wei Wu

Yu-Min Lin

Feng-Yuan Gan

I-Min Lu

Chia-Chi Tsai

Kuo-Yuan Tu

Chin-Yueh Liao

Wei-Sheng Yu

Hui-Chu Lin

Shine-Kai Tseng

Yeong-Shyang Lee

Chi-Wen Kuo

Hsien-Chieh Tseng

Shih-Hao Chen

Chia-Jui Lin

Chia-En Lee

Jui-Yi Chu

Chia-Sheng Lee

Chih-Hao Yang

Kun-Fu Huang

You-Zhi She

Jun-Ping Yang

Xiao-Xia You

Qi-Bin Liu

Chao-Chen Ye

Cheng-Jun Yang

Qi-Jun Zheng

Jun-Jie Zheng

A contact area structure including an organic substrate, an inorganic conductive layer, an organic adhesive layer, and a transparent conductive layer is provided. The organic substrate includes at least one contact pad area including a first block and a second block adjacent to the first block. The inorganic conductive layer is disposed on the organic substrate, in which the inorganic conductive layer is partially disposed on the first block, and a portion of an upper surface of the organic substrate is exposed at the second block. The inorganic conductive layer and the upper surface of the organic substrate are covered by the organic adhesive layer. The transparent conductive layer is disposed on the organic adhesive layer, so that the adhesive strength between the transparent layer and the inorganic conductive layer can be enhanced.

Contact area structure with organic adhesive layer between inorganic conductive layer and transparent conductive layer

A touch module includes a touch panel unit, a conductive adhesive layer and a circuit board. The touch panel unit includes a substrate, a touch sensing structure disposed on the substrate, a signal transmitting structure disposed on the substrate and electrically connected to the touch sensing structure, and a protection layer covering a part of a surface of the signal transmitting structure. The protection layer and the substrate are disposed at two opposite sides of the signal transmitting structure. The conductive adhesive layer has a main portion which covers a region of the signal transmitting structure on which the protection layer is not disposed, and a cover portion which extends from the main portion and covers the protection layer. The circuit board is disposed on the conductive adhesive layer, and the circuit board and the signal transmitting structure are disposed at two opposite sides of the conductive adhesive layer.

Touch module and method for manufacturing the same

An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.

Electrode structure of a transistor for increasing and stabilizing current flowing through drain electrode to source electrode, and pixel structure and display apparatus comprising the same

A thin film transistor comprises a substrate, a gate electrode formed on the substrate, an electrically insulating layer covering the gate electrode, a channel layer made of a semiconductor material and formed on the electrically insulating layer, a source electrode formed on a first lateral side of the electrically insulating layer, and a drain electrode formed on an opposite second lateral side of the electrically insulating layer. The source electrode has an inner end covering a first outer end of the channel layer and electrically connecting therewith. The drain electrode has an inner end covering an opposite second outer end of the channel layer and electrically connecting therewith. An area of the channel layer adjacent to and not covered by one of the source electrode and the drain electrode has an electrical conductivity lower than the electrical conductivity of other area of the channel layer.

Self-aligned metal oxide thin film transistor and method of making same

A thin film transistor (TFT) includes a substrate, a TFT formed on the substrate, and a passivation layer formed on the TFT. The TFT includes a gate, a source, a drain, and a channel layer. The source and the drain are respectively located at opposite sides of the channel layer. The channel layer includes oxygen ions which are implanted into the channel layer by an oxygen implanting process performed in an environment having an air pressure greater than a standard atmospheric pressure.

Thin film transistor substrate, manufacturing method thereof, and liquid crystal display panel using same

A method for manufacturing a thin film transistor (TFT) which includes a gate, a gate insulation layer, a channel layer, an etching stopping layer, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The etching stopping layer is formed on a surface of the channel layer. The channel layer and the etching stopping layer are formed in a same photo etching process.

Thin film transistor utilized in array substrate and manufacturing method thereof

A thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate electrode, a second electrode located on the first electrode and surrounded by the gate electrode, and a channel layer located between the first electrode and the second electrode. The gate electrode can include a first margin metal layer on the substrate and a second metal layer located on the first margin metal layer. A method for manufacturing the thin film transistor is also provided.

Thin film transistor and method of manufacturing same

A thin film transistor (TFT) includes a gate, a gate insulation layer, a channel, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The source and a drain are respectively coupled at opposite sides of the channel layer. The channel layer includes a conductor layer and a semiconductor layer. The semiconductor layer includes a first portion and a second portion respectively coupled at opposite sides of the conductor layer.

Thin film transistor and manufacturing method thereof

A thin film transistor includes a substrate, a gate electrode formed on the substrate, an electrically insulating layer formed on the substrate and covering the gate electrode, a channel layer made of semiconductor material and formed on the electrically insulating layer, an etch stop pattern formed on the channel layer and defining a first through hole and a second through hole; and a source electrode and a drain electrode formed on the etch stop pattern. The source electrode extends into the first through hole to electrically couple to the channel layer. The drain electrode extends into the second through hole to electrically couple to the channel layer. Both the channel layer and the etch stop pattern are formed by using a single mask and a single photoresist layer.

Thin film transistor and method of making same

A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.

Light-emitting semiconductor structure and method for fabricating light-emitting diode device

A method for manufacturing a thin film transistor include following steps. A substrate is provided. A gate electrode and an electrically insulating layer are formed on the substrate. An electric conducting layer is formed on the electrically insulating layer. A first photoresist pattern layer is formed on the electric conducting layer. A portion of the electric conducting layer which is not covered by the first photoresist pattern layer is etched to form an electric conduction layer. A semiconductor layer is formed on the electric conduction layer. A second photoresist pattern layer is formed. A portion of the semiconductor layer which is not covered by the second photoresist pattern layer is etched to form the channel layer covering the electric conduction layer. A source electrode and a drain electrode are formed at the two lateral portions of the channel layer respectively. The thin film transistor is also provided.

Electrode structure of a transistor, and pixel structure and display apparatus comprising the same

A thin film transistor includes a gate electrode, a gate insulating layer, a channel layer, an etching stop layer, two contact holes, a source, and a drain. The gate insulating layer covers the gate electrode. The channel layer is arranged on the gate insulating layer corresponding to the gate electrode. The etching stop layer covers the channel layer and includes an organic stop layer and a hard mask layer, the hard mask layer is located on a surface of the organic stop layer opposite to the channel layer to enhance a hardness of the organic stop layer. The two contact holes pass through the etching stop layer. The source connects to the channel via one contact hole, and the drain connects to the channel via the other contact hole.

Thin film transistor and display array substrate using same

A thin film transistor includes a first gate electrode located on a base, a second gate electrode located on the base, an insulating layer, a source electrode, a drain electrode, and a channel layer. The insulating layer covers the base, the first gate electrode, and the second gate electrode. The second gate electrode is insulated from the first gate electrode. The channel layer includes a first portion and a second portion sandwiched between the first portion and the insulating layer. A conductivity of the second portion is larger than a conductivity of the first portion. The first portion includes a first region facing the first gate electrode and a second region facing the second gate electrode. The source electrode is electrically connected to the first region, and the drain electrode is electrically connected to the second region.

Thin film transistor with two gates protruding from scan line under a double-layer channel

A method of manufacturing a thin film transistor substrate is provided, including a first photoresist pattern covers a channel during a process of etching a second photoresist pattern and protects the channel. Thus, an etching stop layer is not required.

Method of manufacturing thin film transistor

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Hsinchu, Taiwan

Kuo-Lung Fang