Macronix International Co., Ltd.

Kuo-Liang Wei

An-Chi Wei

Ming-Chung Liang

Shih-Ping Hong

Ta-Hung Yang

Henry Chung

Shin-Yi Tsai

Ming-Tsung Wu

Han-Hui Hsu

Ching-Hsiung Li

A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.

Fabrication of metal film stacks having improved bottom critical dimension

A method of manufacturing an L-shaped spacer is described. First, a substrate is provided and a protruding structure is formed thereon. Next, a dielectric material is formed on the substrate and covers the stacked structure. Then, the dielectric material on the top of the protruding structure and on portions of the substrate is removed to form an L-shaped spacer.

Method of manufacturing spacer

A method of reducing pattern pitch is provided. A material layer, a hard mask layer and a patterned photoresist layer are sequentially formed over a substrate. Using the patterned photoresist layer as etching mask, the hard mask layer is etched. Due to the trenching effect, a residual hard mask layer remains in an exposed region exposed by the photoresist layer and micro-trenches are formed at the edges of the residual hard mask layer. Thereafter, using the residual hard mask layer as etching mask to pattern the material layer. Finally, the patterned photoresist layer and the hard mask layer are removed. In the invention, the trenching effect is utilized when etching the hard mask layer. A portion of the hard mask layer remains, and the micro-trenches are formed in the hard mask layer. After the micro-trenches are transferred to the material layer, the pattern pitch can be reduced.

Method of reducing pattern pitch in integrated circuits

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Hsinchu, Taiwan

Kuo-Liang Wei