Conary Enterprise Co., Ltd.

Industrial Technology Research Institute

Phosertek Corporation

Kuo-Jui Lin

Yu-Chen Chen

Chih-Ming Lai

Chien-Hung Lin

Kun-Fong Lin

Bo-Tsun Chou

Yu-chen Chen

Tung-Wei Chi

Ming-Yang Hsu

Chih-yuan Weng

Kun-Feng Lin

A laser device includes a substrate, a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, an insulating layer, a light-transmissive conducting layer, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer form an epitaxy structure having a first platform and a second platform. The first platform has multiple holes to form a photonic crystal structure. The insulating layer is over an upper surface and a sidewall surface of the first platform, and over an upper surface of the second platform. The sidewall surface passes through the contact layer, the second waveguiding layer, and the active layer. The light-transmissive conducting layer connects to the photonic crystal structure through an aperture of the insulating layer. The first electrode has an opening corresponding to the aperture. The second electrode is under the substrate.

Laser device and method of manufacturing the same

An electrically pumped photonic-crystal surface-emitting lasers with optical detector comprises plurality of air holes, by the variation of position and size proportion form a photonic crystal having main structure and sub structure, and produces an optical detection signal by light guiding proportion of the light guiding tunnel, further have power proportion of the laser by reading the strength of the optical detection signal, so the automatic power control circuit can feedback the power proportion for controlling the surface-emitting laser.

Electrically pumped photonic-crystal surface-emitting lasers with optical detector

An electrically pumped surface-emitting photonic crystal laser has a second surface of a first metal electrode arranged on a photonic crystal structure, a first electrical currents confining structure and a filled layer, and a substrate having a top surface arranged on a first surface of the first metal electrode for the photonic crystal structure to be inversely disposed. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to be reflected by the first metal electrode due to the inverse disposition and to be emitted from a rear surface of the epitaxy structure.

Electrically pumped surface-emitting photonic crystal laser

An electrically pumped surface-emitting photonic crystal laser includes an electric currents confinement structure arranged on a photonic crystal structure and an active layer with an opening, a transparent conducting layer arranged on the electric currents confinement structure and covering the photonic crystal structure, a metal anode arranged on the transparent conducting layer with an aperture. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to pass through with conductivity for the purpose of electrically pumping a quantum structure without complex technologies of wafer fusion bonding or epitaxial regrowth. Thereby the laser beams can be emitted from a front surface of the epitaxy structure with a narrow divergence angle.

Electronically pumped surface-emitting photonic crystal laser

A multiwavelength quantum dot laser element is provided. A perpendicular stack of quantum dot active regions with different light emitting wavelengths is employed, and thickness, material composition, and quantum dot size of each of the quantum dot active regions are modulated, so as to form various laser oscillation conditions. When a current applied to the quantum dot laser element is larger than the start-oscillation current condition, lasers with different wavelengths are simultaneously obtained in each of the quantum dot active regions, thereby achieving the application of the multiwavelength quantum dot laser element.

Multiwavelength quantum dot laser element

A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.

Growing community of inventors

Hsinchu, Taiwan

Kuo-Jui Lin