Epistar Corporation

Kuo-Hui Yu

Cheng-Ta Kuo

Yu-Cheng Yang

Tsun-Kai Ko

Shyi-Ming Pan

Cheng-Kuang Yang

Hui-Ching Feng

Chien-Pin Hsu

Chao-Hsing Chen

Chien-Kai Chung

Yi-Wen Ku

Wei-Shou Chen

Chi-Ming Huang

Shih-Wei Yen

An-Ru Lin

A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Light emitting diode having patterned mirror layer

Light emitting diode structure with dielectric reflective layer

A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Light-emitting diode structure with electrode pads of similar surface roughness and method for manufacturing the same

A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.

Light emitting diode and manufacturing method thereof

A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Light-emitting diode device and manufacturing method thereof

Light emitting diode device and manufacturing method therof

Growing community of inventors

Hsinchu, Taiwan

Kuo-Hui Yu