Richtek Technology Corporation

Kuo-Hsuan Lo

Tsung-Yi Huang

Wu-Te Weng

Chien-Hao Huang

Chu-Feng Chen

Chien-Wei Chiu

YU-Ting Yeh

A high voltage device includes: a semiconductor layer, a well, a drift oxide region, a body region, a gate, a source, a drain, and a field plate. The well has a first conductivity type, and is formed in a semiconductor layer. The drift oxide region is formed on the semiconductor layer. The body region has a second conductivity type, and is formed in the semiconductor layer, wherein the body region and a drift region are connected in a channel direction. The gate is formed on the semiconductor layer. The source and the drain have the first conductivity type, and are formed in the semiconductor layer, wherein the source and the drain are in the body region and the well, respectively. The field plate is formed on and connected with the drift oxide region, wherein the field plate is electrically conductive and has a temperature coefficient (TC) not higher than 4 ohm/° C.

High voltage device and manufacturing method thereof

A power device includes: a semiconductor layer, a well region, a body region, a gate, a source, a drain, a first salicide block (SAB) layer and a second SAB layer. The first SAB layer is formed on a top surface of the semiconductor layer, and is located between the gate and the drain, wherein a part of the well is located vertically below and in contact with the first SAB layer. The second SAB layer is formed vertically above and in contact with the first SAB layer.

Power device and manufacturing method thereof

A power device includes: a semiconductor layer, a well region, a body region, a gate, a sub-gate, a source, a drain, and an electric field adjustment region. The sub-gate is formed above a top surface of the semiconductor layer, wherein a portion of the well region is located vertically beneath the sub-gate. The sub-gate is not directly connected to the gate. The electric field adjustment region has a conductivity type which is opposite to that of the well region. The electric field adjustment region is formed beneath and not in contact with the top surface of the semiconductor layer. The electric field adjustment region is located in the well region of the semiconductor layer, and at least a portion of the electric field adjustment region is located vertically beneath the sub-gate.

The invention provides a power device, which includes: an operation layer, including a top surface, a body region and a drift region, the body region and the drift region being connected in a lateral direction, to form a PN junction along a channel width direction between the body region and the drift region; a gate, formed on the top surface, and the PN junction is located under the gate; a source, formed in a portion of the operation layer between the body region and the top surface; a drain, formed in another portion of the operation layer between the drift region and the top surface; a first conduction portion, formed on the top surface for electrically connecting the source; a conduction layer, formed on the first conduction portion and electrically connected to the source via the first conduction portion; and a second conduction portion, formed on the top surface and between the conduction layer and the drift region in a thickness direction, for electrically connecting the drift region and the conduction layer, wherein a Schottky diode is formed by the second conduction portion and the drift region.

Power device

The present invention discloses a transient voltage suppression (TVS) device and a manufacturing method thereof. The TVS device limits a voltage drop between two terminals thereof not to exceed a clamp voltage. The TVS device is formed in a stack substrate including a semiconductor substrate, a P-type first epitaxial layer, and a second epitaxial layer stacked in sequence. In the TVS device, a first PN diode is connected to a Zener diode in series, wherein the series circuit is surrounded by a first shallow trench isolation (STI) region; and a second PN diode is connected in parallel to the series circuit, wherein the second PN diode is surrounded by a second STI region. The first STI region and the second STI region both extend from an upper surface to the second epitaxial layer, but not to the first epitaxial layer.

Transient voltage suppression device and manufacturing method thereof

The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate in which isolation regions are formed for defining a device region; agate formed on the first conductive type substrate; a source and a drain formed in the device region and located at both sides of the gate respectively, and doped with second conductive type impurities; a second conductive type well, which is formed in the first conductive type substrate, and surrounds the drain from top view; and a first deep trench isolation structure, which is formed in the first conductive type substrate, and is located in the second conductive type well between the source and the drain from top view, wherein the depth of the first deep trench isolation structure is deeper than the second conductive type well from the cross-sectional view.

The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate in which isolation regions are formed for defining a device region; a gate formed on the first conductive type substrate; a source and a drain formed in the device region and located at both sides of the gate respectively, and doped with second conductive type impurities; a second conductive type well, which is formed in the first conductive type substrate, and surrounds the drain from top view; and a first deep trench isolation structure, which is formed in the first conductive type substrate, and is located in the second conductive type well between the source and the drain from top view, wherein the depth of the first deep trench isolation structure is deeper than the second conductive type well from the cross-sectional view.

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Taoyuan, Taiwan

Kuo-Hsuan Lo