United Microelectronics Corp.

Kuo-Hsiung Huang

Hsin-Yu Chen

Chun-Mao Chiou

Chang-Sheng Hsu

Ching-Li Yang

Home-Been Cheng

Yu-Han Tsai

Kuo-Yuh Yang

Chia-Huei Lin

Shou-Wei Hsieh

Te-Yuan Wu

Meng-Jia Lin

Yan-Da Chen

Wei-Hua Fang

Chia-Wen Lien

A method of forming a semiconductor device is disclosed. Provided is a substrate having at least one MOS device, at least one metal interconnection and at least one MOS device formed on a first surface thereof. A first anisotropic etching process is performed to remove a portion of the substrate from a second surface of the substrate and thereby form a plurality of vias in the substrate, wherein the second surface is opposite to the first surface. A second anisotropic etching process is performed to remove another portion of the substrate from the second surface of the substrate and thereby form a cavity in the substrate, wherein the remaining vias are located below the cavity. An isotropic etching process is performed to the cavity and the remaining vias.

Semiconductor device and method of forming the same

The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on a surface of the via opening. The barrier layer is disposed on a surface of the insulation layer. The buffer layer is disposed on a surface of the barrier layer. The conductive electrode is disposed on a surface of the buffer layer and a remainder of the via opening is completely filled with the conductive electrode. A portion of the buffer layer further covers a surface of the conductive electrode at a side of the second surface and said portion is level with the second surface.

Through silicon via and method of forming the same

A thinning method of a wafer is provided. The method includes the following steps. First, a wafer having a first surface, a second surface, and a side surface is provided, and the side surface is connected between the first surface and the second surface. At least one semiconductor device is formed on the first surface. Then, an anisotropy etching process is performed to the second surface with a mask to remove portions of the wafer while remaining the side surface thereby forming a number of grooves in the second surface and at least one reinforcing wall between the grooves. As a result, a thinned wafer is obtained.

Thinned wafer and fabricating method thereof

The present invention relates to a through silicon via (TSV). The TSV is disposed in a substrate including a via opening penetrating through a first surface and a second surface of the substrate. The TSV includes an insulation layer, a barrier layer, a buffer layer and a conductive electrode. The insulation layer is disposed on the surface of the via opening. The barrier layer is disposed on the surface of the insulation layer. The conductive electrode is disposed on the surface of the buffer layer and fills the via opening. The buffer layer further covers a surface of the conductive electrode at the side of the second surface. The present invention further discloses a method of forming the TSV.

Growing community of inventors

Hsinchu County, Taiwan

Kuo-Hsiung Huang