Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Kuo-Hsing Kao

Anne S Verhulst

A tunnel field effect transistor (TFET) and method of making the same is provided. The TFET comprises a source-channel-drain structure and a gate electrode. The source region comprises a first source sub-region which is doped with a first doping profile with a dopant element of a first doping type having a first peak concentration and a second source sub-region close to a source-channel interface which is doped with a second doping profile with a second dopant element with the same doping type as the first dopant element and having a second peak concentration. The second peak concentration of the second doping profile is substantially higher than the maximum doping level of the first doping profile close to an interface between the first and the second source sub-regions.

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Leuven, Belgium

Kuo-Hsing Kao