Excellence Opto. Inc.

Excellence Optoelectronics Inc.

Kuo-Hsin Huang

Fu-Bang Chen

Tzeng-Guang Tsai

Chang-Ching Huang

Wen-Hsing Huang

Yung-Hsiang Chao

Chih-Chiang Chang

Chun-Ming Lai

Tsung-Hsiang Chen

Chun-Der Wu

Kuo-Shu Tseng

Chung-Yu Chou

Wei-Po Shen

Tai-Hui Liu

Tsung-ting Hua

Sung-wen Huang Chen

Hao-Chung Kuo

Fang-Jyun Liou

An-Chen Liu

Tsung-Ting Hua

Disclosed is a small-size vertical-type light emitting diode chip with high luminous in a central region. A PN junction structure is arranged on a light emitting region base of an interface structure, the interface structure is provided with a P-type Ohmic contact area at the light emitting region base, a central area of the PN junction structure is above the P-type Ohmic contact area, an insulating layer is formed on an extending platform adjacent to the light emitting region base and extends to cover an N-type semiconductor of the PN junction structure to form a border covering region surrounding the N-type semiconductor, an N-type Ohmic contact electrode covers the border covering region, and an N-type electrode pad is arranged on the insulating layer and electrically connected with the N-type Ohmic contact electrode via a bridging connected metal layer.

Small-size vertical-type light emitting diode chip with high luminous in central region

The invention is a small-sized vertical light emitting diode chip with high energy efficiency, wherein a PN junction structure is arranged on a light-emitting region platform of an interface structure; a highly reflective metal layer is arranged under the light-emitting region platform; the interface structure is provided with a P-type ohmic contact area under an outwardly extending platform adjacent to the light-emitting region platform; an insulating layer is formed on the outwardly extending platform; an N-type ohmic contact electrode is in ohmic contact with the PN junction structure and covers the border covering region at a position opposite to the outwardly extending platform; the current conduction is achieved diagonally on the opposite sides by locally diagonally symmetric geometric positioning of the N-type ohmic contact electrode and the P-type ohmic contact area.

Small-sized vertical light emitting diode chip with high energy efficiency

A three-in-one RGB mini-LED device includes a substrate, a second electrical semiconductor layer, a plurality of multiple-quantum well layers, a plurality of first electrical semiconductor layers, and a plurality of mirrors. The second electrical semiconductor layer is disposed on the substrate. The plurality of multiple-quantum well layers are disposed on the second electrical semiconductor layer. An area of each of the plurality of multiple-quantum well layers is smaller than an area of the second electrical semiconductor layer, and a region on the second semiconductor layer is not covered by the plurality of multiple-quantum well layers.

Three-in-one RGB mini-LED device

A package substrate comprises first, second and third electrical test contacts, wherein the package substrate is provided with an upper element plane and a lower SMD electrode plane on two sides. The side edge of the upper element plane is provided with first and second electrodes of the main element and first and second electrodes of the secondary element. The main element of LED chip is electrically connected between the first and second electrodes of the main element, a parallel circuit secondary element is electrically connected between the first and second electrodes of the secondary element. The electrical characteristics of the main element of LED chip and the parallel circuit secondary element are measured through the first, second, and third electrical test contacts when electrically connected.

LED package with multiple test pads and parallel circuit elements

The invention comprises a light emitting diode chip and a package substrate. The light emitting diode chip is provided with a semiconductor epitaxial structure, a lateral extending interface structure, a chip conductive structure, an N-type electrode located above the semiconductor epitaxial structure and a P-type bypass detection electrode located on the lateral extending interface structure. The chip conductive structure is provided with a P-type main electrode located on a lower side. The package substrate comprises a plurality of electrode contacts through which the N-type electrode, the P-type bypass detection electrode and the P-type main electrode are connected, and a process quality of a alternative substrate adhesive layer in one of the semiconductor epitaxial structure and the chip conductive structure and a chip-substrate bonding adhesive layer between the P-type main electrode and the package substrate is evaluated by detecting electrical characteristics.

Vertical light emitting diode chip package with electrical detection position

The invention provides a chip structure of a micro light-emitting diode display, comprising a package substrate, at least one light-emitting diode (LED) element, at least one metal oxide semiconductor field effect transistor (MOSFET), and a connection line. The LED element and the MOSFET are positioned on the package substrate, and each MOSFET comprises a source connected with the input voltage in common, a gate connected with a main control circuit, and a drain. An end of the LED element is connected with the drain of the MOSFET through the connection line, and the other end of the LED element is independently connected with a source drive circuit. Therefore, the MOSFET is provided on the package substrate and integrated in a chip structure, so as to achieve a better heat dissipation effect and requirements of high density and brightness.

Chip structure of micro light-emitting diode display

The invention provides an automotive lighting unit for detecting electrical characteristics of light emitter diode component. At least one light emitter diode light source is selectively disposed on any one of at least one circuit channel of at least one drive power loop. At least one circuit breaker comprises at least one circuit switch corresponding to the at least one drive power loop, and is disposed on the circuit channel with the at least one light emitter diode light source. The at least one circuit channel is controlled by the at least one circuit switch to turn in a state of isolating from a drive power. An ammeter connection line is connected with the two sides one of the at least one light emitter diode light source.

Automotive lighting unit for detecting electrical characteristics of light emitter diode component

The invention provides a light-emitting diode grain structure with multiple contact points, including a P-type electrode, a conductive base plate, a light-emitting semiconductor layer, a plurality of ohmic contact metal points, a mesh-structured connection conductive layer, a connection point conductive layer, and an N-type electrode pad electrically connected to the connection point conductive layer. The plurality of ohmic contact metal points is arranged on an N-type semiconductor layer in a spreading manner, and is contacted with the N-type semiconductor layer. No ohmic contact is formed between the connection conductive layer and the N-type semiconductor layer. Accordingly, the metal points and the connection conductive layer can disperse a current, reduce a shading area, and improve the luminous efficiency and component reliability; and uniform light emission from a surface facilitates the light distribution uniformity of an original light source and exciting light after phosphor is coated.

Light-emitting diode grain structure with multiple contact points

A vertical light emitting diode structure with high current dispersion and high reliability comprises a conductive substrate with a central region and a side region; a light emitting semiconductor layer is disposed on the central region; an ohmic contact metal layer is disposed at a center of the light emitting semiconductor layer; an N-type electrode is disposed at the side region and is connected with the ohmic contact metal layer and the N-type electrode through an N-type electrode bridging structure; a working current is diffused from the center of the light emitting semiconductor layer to have high current dispersion, so that the problem of heat dissipation of local high current caused by the design that the N-type electrode is disposed on the edge can be solved.

Vertical light emitting diode structure with high current dispersion and high reliability

A surface light source LED device includes a circuit board, at least one power input and at least two LED bar elements, the at least two LED bar elements are arranged in a staggered manner, and each of the LED bar elements includes a plurality of LED bars arranged linearly on the circuit board. Each of the LED bars has a straight strip structure and has a plurality of LED dies of the same type provided inside. The plurality of LED dies is arranged linearly at equal intervals.

Surface light source LED device

A fan-out wafer level light-emitting diode package method for packaging a plurality of light-emitting diode chips on a wafer protective film, the method comprising: forming a package surface layer on first electrodes of the light-emitting diode chips, and then forming a plurality of leading electrodes electrically connected to the first electrodes on the package surface layer, cutting the light-emitting diode chips, sorting and testing as well as regrouping the light-emitting diode chips, covering sides of the light-emitting diode chips with a package layer, drilling and filling a conductive material on the package layer to form a plurality of common electrodes, and then printing a plurality of common electrical circuits, electrically connecting each of the common electrical circuits to one of the common electrodes and the leading electrodes, and finally covering with a circuit protection layer to complete the process.

Fan-out wafer level light-emitting diode package method and structure thereof

A wafer substrate, a light emitting diode (LED) light-emitting layer, a circuit layer and an excitation material layer are included. The LED light-emitting layer includes at least two light-emitting regions, independently distinguished. The circuit layer includes at least two circuit structures that correspond to the at least two light-emitting regions in quantity and are independently controlled. The excitation material layer includes at least one photo-luminescence material, at least one of the at least two light-emitting regions is provided with different photo-luminescence materials, and at least one of the at least two light-emitting regions is not provided with the photo-luminescence material. Accordingly, in the present invention, at least two light colors can be formed over a single wafer substrate through the at least two independently-controlled circuit structures and providing the different photo-luminescence materials.

Growing community of inventors

Miaoli County, Taiwan

Kuo-Hsin Huang