Visera Technologies Company Limited

Radiant Opto-electronics Corporation

Radiant Opto-electronics (suzhou) Co., Ltd.

Kuo-Feng Lin

Chin-Chuan Hsieh

Wu-Cheng Kuo

Yu-Kun Hsiao

Chung-Hao Lin

Tsung-Lin Wu

Yu-Jen Chen

Hui-Ching Hsueh

Wei-Chen Lin

Chung-Jung Hsu

Kuang-Peng Lin

Shih-Yu Ho

Hui-Wen Lu

Yu-Ping Tseng

An optical element includes a waveguide substrate, first and second optical film structures, and a sub-wavelength nanostructure. The waveguide substrate has first and second sides, a light entering surface and a light exiting surface. An image beam can enter the interior of the waveguide substrate through the light entering surface and travel in a manner of total internal reflection. The image beam exits the waveguide substrate via the light exiting surface after one or more reflections. The first and second optical film structures are respectively arranged on the first and second sides. The sub-wavelength nanostructure arranged on the first side can receive and diffract the image beam to couple the image beam to the waveguide substrate. The first and second optical film structures can reflect the part of the image beam at the incident angle smaller than the critical angle of the waveguide substrate.

Optical element, image waveguide method, head-mounted display apparatus and diffractive waveguide display

An optical structure is provided. The optical structure includes a sensor, a bandpass filter and a plurality of protrusions. The bandpass filter is disposed above the sensor. The protrusions are disposed on the bandpass filter. The bandpass filter allows light with a wavelength of 700 nm to 3,000 nm to pass through. The protrusions have a size distribution that controls the phase of the incident light to be between 0 and 2π.

Optical structure having polymer-covered protrusions contacting bandpass filter

An image sensor is provided. The image sensor includes a substrate having a first region and a second region adjacent to each other; and a first photoelectric conversion component disposed on the first region of the substrate, and the first photoelectric conversion component includes: a first metal layer formed on the substrate; a first photoelectric conversion layer formed on the first metal layer; and a second metal layer formed on the first photoelectric conversion layer.

Image sensor

An optical device is provided. The optical device has a central region and a first-type region surrounding the central region. The first-type region includes a first sub-region and a second sub-region between the central region and the first sub-region. The optical device includes a substrate. The optical device also includes a meta-structure disposed on the substrate. The meta-structure includes first pillars in the first sub-region and second pillars in the second sub-region. In the cross-sectional view of the optical device along the radial direction of the optical device, two adjacent first pillars have a first pitch, two adjacent second pillars have a second pitch, and the second pitch is greater than the first pitch.

Optical device

An optical device includes a first region and a second region surrounding the first region. The optical device includes a substrate. The optical device also includes a first meta-structure disposed on the substrate and has a plurality of first peripheral pillars in the second region. The optical device further includes a second meta-structure disposed on the substrate and has a plurality of second peripheral pillars corresponding to the plurality of first peripheral pillars. Each of the second peripheral pillars has a first shifting distance with respect to a corresponding first peripheral pillar in the direction extending from the center of the optical device to the edge of the optical device.

An optical device includes a first conductive layer, a first junction layer, a light absorption layer, a second junction layer, and a second conductive layer. The first junction layer is disposed on the first conductive layer. The light absorption layer is disposed on the first junction layer, wherein the light absorption layer includes a plurality of unit cells, each of the unit cells includes a plurality of pillar structures, and the pillar structures of each of the unit cells are different sizes. The second junction layer is disposed on the light absorption layer. The second conductive layer is disposed on the second junction layer.

An image-sensing device includes photoelectric elements for receiving incident light. The photoelectric elements are arranged into unit cells, and each of the unit cells includes a first, a second, a third and a fourth photoelectric element. The first, the second, the third and the fourth photoelectric elements in each of the unit cells are formed of pillar structures, and the first, the second, the third and the fourth photoelectric elements are different sizes. The first photoelectric element captures a first image in a first phase, the second photoelectric element captures a second image in a second phase, the third photoelectric element captures a third image in a third phase, and the fourth photoelectric element captures a fourth image in a fourth phase. The first phase, the second phase, the third phase, and the fourth phase are different.

Image-sensing device

An optical communication device includes a plurality of laser sources, a plurality of first meta-lenses, and an optical fiber. The laser sources transmit a plurality of laser beams in the same direction according to electrical signals. The laser beams have different wavelengths. The first meta-lenses receive the laser beams, and in a first substrate, refract the laser beams to a focal point to generate a mixed laser beam. The optical fiber receives the mixed laser beam for transmission. The focal point is arranged at the input end of the optical fiber.

Optical communication device

An optical device is provided. The optical device includes a substrate, a plurality of color filters formed on the substrate, and a plurality of spacers formed between the color filters. Each spacer has a first sidewall and a second sidewall opposite to the first sidewall. There is a first angle between the first sidewall of each spacer and a normal line of the top surface of the substrate. There is a second angle between the second sidewall of each spacer and the normal line of the top surface of the substrate. At least one of the first angle and the second angle is increased gradually towards the edge of the substrate.

Optical devices

An optical device is provided. The optical device includes a plurality of metal grids, a first patterned organic layer, and a second patterned organic layer. The first patterned organic layer includes a first portion having a first thickness, a second portion having a second thickness, a third portion having a third thickness, and a plurality of fourth portions. The first portion, the second portion and the third portion are respectively formed between the metal grids. The fourth portions are formed on the metal grids. The first thickness of the first portion is greater than the second thickness of the second portion. The second thickness of the second portion is greater than the third thickness of the third portion. The second patterned organic layer is formed on the fourth portions of the first patterned organic layer.

An optical element is provided. The optical element includes an array structure having an implant area and a non-implant area. The non-implant area is adjacent to the implant area. The implant area has an implant concentration ranging from 1&#xd7;10cmto 6.7&#xd7;10cm. The array structure is a color filter array including a plurality of color filters. At least one of the color filters has the implant area. The implant area has a first refractive index. The non-implant area has a second refractive index. The first refractive index is greater than the second refractive index.

Optical elements

An image sensor is provided. The image sensor includes: a plurality of photoelectric elements for receiving an incident light. The photoelectric elements are arranged into a plurality of unit cells, and each of the unit cells includes a first photoelectric element and a second photoelectric element. The first photoelectric element in each of the unit cells captures a first pixel in a first phase, and the second photoelectric element in each of the unit cells captures a second pixel in a second phase, wherein the first phase is different from the second phase.

Lens-free image sensor using phase-shifting hologram

An image sensor is provided. The image sensor includes a microlens array having a plurality of microlenses; and a sensor array having a plurality of photoelectric elements that are arranged into a plurality of macro pixels. Each macro pixel includes a first photoelectric element, a second photoelectric element, a third photoelectric element, and a fourth photoelectric element that receive incident light via a first microlens, a second microlens, a third microlens, and a fourth lens in the plurality of microlenses. The first microlens, the second microlens, the third microlens, and the fourth microlens in each macro pixel have a first initial offset, a second initial offset, a third initial offset, and a fourth initial offset, respectively. The first microlens and the second microlens in each of the plurality of macro pixels further have a first additional offset and a second additional offset, respectively.

Image sensor with shifted microlens array

An image sensor includes a sensing layer, a number of filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the sensing layer and surrounding each of the filter units. The grid structure includes a first partition wall disposed on the sensing layer and located between two adjacent filter units, and a second partition wall disposed on the first partition wall located between the two adjacent filter units. The refractive index of the first partition wall is less than the refractive index of the second partition wall.

An image sensor package includes a medium layer having a first surface and a second surface opposite to the first surface. The image sensor package also includes a metal-insulator-metal structure disposed on the first surface of the medium layer. The metal-insulator-metal structure includes a first metal layer, a first insulating layer, and a second metal layer, and the first insulating layer is disposed between the first metal layer and the second metal layer. The image sensor package further includes an optical filter disposed on the second surface of the medium layer.

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Kaohsiung, Taiwan

Kuo-Feng Lin