Epistar Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Wistron Neweb Corporation

Kuo-Feng Huang

Cheng-Hsing Chiang

Yung-Fu Chang

Shih-Chang Lee

Yi-Ching Lee

Cheng-Long Yeh

Chih-Huang Lai

Chun-Chieh Lin

Chun-Yu Lin

Wen-Luh Liao

Li-Chieh Wu

Chang-Sheng Lin

Rong-Ren Lee

Hsin-Chan Chung

Hung-Ta Cheng

Yao-Ru Chang

Ching-Yuan Tsai

Ming-Ta Chin

Ming-Siang Huang

Hsu-Hsuan Teng

Chien-Hao Chung

Jih-Ming Tu

Ming-Tzung Liou

Cheng-Feng Yu

Sheng-Huang Huang

Chia-Hung Lin

Ya-Chen Kao

Ming-Han Tsai

Chun-Jung Lin

Wen-Cheng Chen

Shih-Hao Cheng

Ming-Te Liu

Shih-Nan Yen

Yen-Chun Tseng

Jui-Che Sung

Yi-Wei Chiu

Chun-Hao Kung

Yung-Cheng Lin

Shih-Pang Chang

Ding-Shuo Wang

Hsiu-Hau Lin

Kaw-Wei Kuo

Yi-Wei Yao

Ping-Fei Shen

Ching-Jen Wang

Wei-Chun Chen

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

Semiconductor device and semiconductor component including the same preliminary class

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

Semiconductor device and semiconductor component including ihe same

A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Method of cleaning wafer after CMP

A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.

Light-emitting device

An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

Optoelectronic device and the manufacturing method thereof

A cleaning apparatus and a method of using the cleaning apparatus are provided. The method includes first moving a pencil pad into contact with a top surface of a wafer, wherein the pencil pad is connected to a pivot arm and second moving the pivot arm in a sweeping motion from a first zone to a second zone, the first zone being closer to a center of the top surface of the wafer than the second zone, wherein the sweeping motion is controlled by a controller, the pivot arm moves at a first speed in the first zone and the pivot arm moves at a second speed in the second zone, wherein the first speed is different from the second speed.

CMP cleaning system and method

A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Light-emitting device and manufacturing method thereof

An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

An adapter for connecting to a connector in a first direction is provided. The adapter includes a plurality of signal pins, arranged in a loop, a power pin, configured to transmit a power signal to the connector, and a detection circuit, coupled to the power pin and the plurality of signal pins. A feedback signal is provided by the connector in response to the power signal that is transmitted through one of the plurality of signal pins, and an interface of the connector is identified by the detection circuit and a pin order of the adapter is defined by the detection circuit according to the feedback signal.

Adapter and electronic device having the adapter

The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.

Growing community of inventors

Hsinchu, Taiwan

Kuo-Feng Huang