United Microelectronics Corp.

Kuo Feng Huang

Neng-Hui Yang

Tsung-Tang Hsieh

Hua-Wei Peng

Chih Chung Kuo

Zhi Fan Sun

Ming Hsien Chung

A lithography system includes an immersion lithographic apparatus, a fluid supply device, and a sensor. The fluid supply is configured to supply fluid to the immersion lithographic apparatus. The fluid supply device includes at least one liquid storage tank, an upper liquid pipe and a lower liquid pipe connected to the liquid storage tank. The sensor includes at least one hydraulic pressure gauge. The at least one hydraulic pressure gauge is arranged near a lower part of the liquid storage tank and connected to the lower liquid pipe and the upper liquid pipe so as to measure the hydraulic pressure at a bottom of the liquid storage tank. The height of the liquid level in the liquid storage tank is calculated from the hydraulic pressure.

Lithography system and method of detecting fluid leakage in liquid storage tank of the same

A method for electroplated metal annealing process. First, a semiconductor structure is provided, wherein the semiconductor structure has a plurality of semiconductor components, such as a gate electrode, a source region and a drain region, and a field oxide region. Second, a dielectric layer is formed over the semiconductor structure, and a via which exposes a part of the semiconductor structure is formed in the dielectric layer by the use of conventional lithographic and etching processes and an electroplated metal layer is formed over the dielectric layer; meanwhile, the via is filled with the electroplated metal layer. The electroplated metal layer is then annealed by a NH plasma process performed by plasma enhanced chemical vapor deposition (PECVD).

Method for electroplated metal annealing process

Growing community of inventors

Chu-Pei, Taiwan

Kuo Feng Huang