United Microelectronics Corp.

Advanced Wireless Semiconductor Company

Kuo-Chun Huang

Chien-Hao Chen

Wen-Liang Huang

Kun-Mu Hsieh

You-Min Chi

Yu-Chen Chiu

A heterojunction bipolar transistor includes a substrate, a semiconductor unit, an electrode unit and a dielectric layer. The semiconductor unit includes a collector layer, a base layer and an emitter layer sequentially formed on the substrate in such order. The electrode unit includes a collector electrode, a base electrode, and an emitter electrode respectively disposed on the collector layer, the base layer and the emitter layer. The dielectric layer covers and cooperates with the emitter layer to define an opening extending therethrough and terminating at the base layer to expose a contact region. The base electrode is disposed on the contact region, extends through the opening, and partially covers the dielectric layer.

Heterojunction bipolar transistor

An overlay mark including at least one first overlay mark and at least one second overlay mark is provided. The first overlay mark includes a plurality of first bars and a plurality of first spaces arranged alternately, and the first spaces are not constant. The second overlay mark includes a plurality of second bars and a plurality of second spaces arranged alternately, and the second spaces are constant. Besides, the second overlay mark partially overlaps with the first overlay mark.

Alternately arranged overlay marks having asymmetric spacing and measurement thereof

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Tainan, Taiwan

Kuo-Chun Huang