Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuo-Ching Tsai

Chi-Hsi Wu

Chun-Sheng Liang

Kuo-Chiang Ting

Hou-Ju Li

Kao-Ting Lai

Chun-Liang Shen

An integrated circuit device includes a fin at least partially embedded in a shallow trench isolation (STI) region and extending between a source and a drain. The fin is formed from a first semiconductor material and having a trimmed portion between first and second end portions. A cap layer, which is formed from a second semiconductor material, is disposed over the trimmed portion of the fin to form a high mobility channel. A gate electrode structure is formed over the high mobility channel and between the first and second end portions.

Growing community of inventors

Hsin-Chu, Taiwan

Kuo-Ching Tsai