Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuo-Chin Liu

Hsin-Chih Chen

Chao-Cheng Chen

Chun-Hung Lee

Jiun-Ming Kuo

Chih-Hsien Hsu

Wen-Chih Chen

Chen-Huang Huang

Che-Yuan Hsu

You-Ting Lin

Yu-Pei Chiang

Chia-Chi Chung

Jr-Sheng Chen

Duen-Huei Hou

Jen-Hong Chang

Lin-Ching Huang

Chin-Han Meng

Han-Yu Tsai

Chung-Long Leu

Mei-Hou Ke

J H Wang

Zhi-Sheng Xu

A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.

Fin field-effect transistor and method of forming the same

A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.

Method for forming micro-electro-mechanical system (MEMS) device structure

A method of forming floating gates for flash memory devices. A plurality of substrates is provided, in which a film to be etched and an overlying masking pattern layer are provided overlying each substrate. Each of the films in a plasma chamber is etched in sequence using the masking pattern layer as an etch mask, a polymer layer being deposited over the inner wall of the plasma chamber during the etching. An intermediary cleaning process is performed in the plasma chamber between the etchings before the deposited polymer layer reaches such a degree as to induce lateral etching on the next film to be etched, thereby improving etching profile of the films.

Method of improving etching profile of floating gates for flash memory devices

Growing community of inventors

Ji'an, Japan

Kuo-Chin Liu